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METHOD FOR FABRICATING A STRAINED STRUCTURE

  • US 20110272739A1
  • Filed: 05/06/2010
  • Published: 11/10/2011
  • Est. Priority Date: 05/06/2010
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising:

  • a substrate comprising a top surface;

    a gate stack over the substrate;

    an isolation structure in the substrate; and

    a source/drain (S/D) recess cavity below the top surface of the substrate disposed between the gate stack and the isolation structure, the recess cavity comprising;

    a lower portion, the lower portion further comprising a first strained layer and a first dielectric film, wherein the first strained layer is disposed between the isolation structure and the first dielectric film; and

    an upper portion comprising a second strained layer overlying the first strained layer and first dielectric film.

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