CIRCUIT ARCHITECTURE ON AN ORGANIC BASE AND RELATED MANUFACTURING METHOD

• US 20110275018A1
• Filed: 05/05/2011
• Published: 11/10/2011
• Est. Priority Date: 04/02/2007
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: di Matteo, Andrea, Cimmino, Angela
• Granted Patent: US 8,470,633 B2
• Time in Patent Office: Days
• US Class Current: 430/312
• CPC Class Codes: G03F 7/11 having cover layers or intermediate layers, e.g. subbing layers G03F7/091 - G03F7/093, B41N3/03 take precedence
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask
• CPC Class Codes: Y10T 428/31786 Of polyester [e.g., alkyd, etc.]

Abstract

A method comprises providing a bottom electrode, depositing, on the bottom electrode, an active material comprising a first structural portion having an absorption peak at a UV wavelength, wherein such first structural portion is photo-activatable at such wavelength and which is constituted by monomers or oligomers that, when irradiated at said wavelength, undergo a photo-polymerization and/or photo-cross-linking reaction, or constituted by a polymer that at a UV wavelength undergoes a photo-degradation reaction, and a second electrically active or activatable structural portion which is substantially transparent to such predetermined UV wavelength; exposing a portion of the active material, through a photomask, to UV radiation having such UV wavelength, with photo-activation of the exposed portion of such film; selectively removing either the exposed photo-activated portion or the non-exposed portion, with exposure of a respective portion of the bottom electrode; depositing a head electrode.

Claims

1. A method, comprising:

manufacturing an organic-based circuit architecture, the manufacturing including;

forming a first electrode;

depositing, on said first electrode, a first active material film that includes;

a first structural portion having a first absorption peak at a first UV wavelength, said first structural portion being photo-activatable at said first UV wavelength, and

an electrically activatable second structural portion which is substantially transparent to said UV first wavelength;

photo-activating a first portion of said first active material film, the photo-activating including exposing the first portion through a photomask to a first UV radiation having said first UV wavelength, the first active material film also including a non-exposed second portion protected from the first UV radiation by the photomask;

exposing a portion of said first electrode by treating said first active material film with an first agent;

selectively removing one of the portions of said first active material film, either the exposed first portion or the non-exposed second portion; and

forming a second electrode on non-removed portions of the first active material film.

2. The method according to claim 1, wherein forming the first electrode includes forming said first electrode on a substrate and the manufacturing further comprises:

exposing portions of the substrate after one of the portions of the first active material film is selectively removed;

depositing a first dielectric material on the non-removed portions of said first active material film and on the exposed portions of the substrate; and

selective exposing said non-removed portions of said first active material film by treating said first dielectric material with a second agent; and

selectively removing a portion of the first dielectric material.

3. The method according to claim 1, wherein the manufacturing includes:

forming a crossbar architecture, the forming of the crossbar architecture including;

forming the first electrode in a first array of a plurality of first electrodes, the plurality of first electrodes being substantially parallel and spaced-apart from each other; and

forming the second electrode in a second array of a plurality of second electrodes, the plurality of second electrodes being substantially parallel and spaced-apart from each other, the second array of second electrodes being substantially orthogonal to the first array of first electrodes.

4. The method according to claim 3, further comprising:

forming a multilayer architecture, the forming including;

depositing a second active material film after forming the second array of the second electrodes, the second active material film including a first structural portion having a second absorption peak at a second UV wavelength, said first structural portion being photo-activatable at said second UV wavelength, and an electrically activatable second structural portion which is substantially transparent to said second UV wavelength;

exposing a first portion of said second active material film to a second UV radiation having the second UV wavelength, to photo-activate said exposed first portion of said the second active material film, the second active material film also including a non-exposed second portion protected from the second UV radiation;

exposing portions of the second electrodes by selectively removing one of the portions of the second active material film;

depositing a second dielectric material on the non-removed portions of said second active material film and on the exposed portions of said second electrodes;

exposing the non-removed portions of the second active material film by selectively removing the second dielectric material; and

forming a third array of third electrodes on the non-removed portions of the second active material film, the third electrodes being parallel to each other and orthogonal to the second electrodes.

5. The method according to claim 1, wherein said first and second electrodes are deposited through a photomask using one selected from the group consisting of thermal evaporation, sputter, microtransfer molding, and microcontact printing.

6. The method according to claim 1, wherein said first active material film is deposited using spin-coating or spin-casting.

7. The method according to claim 1 wherein the first structural portion forms an intrinsically electro-bistable polymer formed from one selected from the group consisting of a photo-polyerized monomer, a photo-polyerized oligomer, a photo-cross-linked monomer, a photo-cross-linked oligomer, and a photo-degraded polymer.

8. The method according to claim 7, wherein said first active material film is a derivative of polymethylmethacrylate (PMMA).

9. The method according to claim 8, wherein said derivative of PMMA is polymethylmethacrylate-co-9-anthracenylmethylmethacrylate.

10. The method according to claim 1, wherein said first structural portion is a chemically inert matrix for said second structural portion dispersed therein, and in which said second structural portion includes electro-bistable molecules.

11. The method according to claim 7 wherein the polymer is formed from one selected from the group consisting of side-chain maleimide groups, a photoresist, or formed on an acrylic, methacrylic, or ether vinyl base containing optionally substituted side-chain chalcone groups.

12. The method according to claim 10, wherein said electro-bistable molecules are chosen from the group consisting of fluorescein and its derivatives, DDQ (2,3-dichloro-5,6 dicyano-p-benzoquinone), DDME (1,1-dicyano-2,2-(4-dimethyl aminophenyl) ethylene), Ni-Pc (nickel (II) phthalocyanine tetrasulfonic acid tetrasodium), AIDCN (2-amino-4,5 imidazole dicarbonitrile), DMNDPA (N,N-dimethyl-N-(3-nitrobenzylidene)-p-phenylenediamine).

13. The method according to claim 7 wherein said first structural portion is a chemically inert matrix for said second structural portion dispersed therein, and in which said second structural portion comprises at least two molecular species, having respectively electron-acceptor character and electron-donor character, said at least two molecular species generating a charge transfer system.

14. The method according to claim 13, wherein the polymer is formed from one selected from the group consisting of side-chain maleimide groups, azidoaryl groups, a photoresist or formed on an acrylic, methacrylic, or ether vinyl base containing optionally substituted side-chain chalcone groups.

15. The method according to claim 1, wherein said second structural portion is dispersed in said first structural portion, with said structural portions having one being an electron-acceptor character, and the other an electron-donor character, said structural portions constituting a charge transfer system.

16. The method according to claim 15, wherein said first structural portion includes a photoresist.

17. The method according to claim 15, wherein said charge transfer system includes fullerene-C60 dispersed in a copolymer selected from the group consisting of tetrathiafulvalene (TTF) and poly(chloromethylstyrene (PSTFF), and polymethylmethacrylate and co-9-anthracenylmethylmethacrylate.

18. The method according to claim 1, wherein said second structural portion includes an electro-bistable molecular or functional groups chemically bonded, as pendant groups, to said first structural portion.

19. The method according to claim 18, wherein said first structural portion includes acrylated polymer, methacrylated polymers, acrylated monomers, or methacrylated monomers.

20. The method according to claim 18, wherein said electro-bistable molecular or functional groups include fluorescein or fluorescein derivatives.

21. The method according to claim 7, wherein said second structural portion includes at least two different molecular or functional groups chemically bonded, as pendant groups, to said first structural portion, with said at least two different molecular or functional groups having one with an electron-acceptor character, and another with an electron-donor character, said at least two different molecular or functional groups constituting a charge transfer system.

22. The method according to claim 21, wherein the polymer of said first structural portion is selected from the group consisting of a methacrylated polymer, a methacrylated monomers, a polymer containing side-chain maleimide groups, and an oligomer containing side-chain maleimide groups.

23. The method according to claim 21, wherein said charge transfer system comprises PCBM and carbazole.

24. The method according to claim 1, wherein said second structural portion includes molecular or functional groups chemically bonded, and grafted as pendant groups, to said first structural portion, with said structural portions having one group of an electron-acceptor character, and another of an electron-donor character, said structural portions constituting a charge transfer system.

25. The method according to claim 1, wherein said second structural portion includes electro-bistable molecular or functional groups chemically bonded along said first structural portion.

26. The method of claim 7 wherein the polymer is formed from one selected from the group consisting of polymethylmethacrylate, fluorinated polymethylmethacrylate, oximine polymethylmethacrylate, and a photoresist.

27. The method of claim 13 wherein the polymer is formed from one selected from the group consisting of polymethylmethacrylate, fluorinated polymethylmethacrylate, oximine polymethylmethacrylate, and a photoresist.

28. A method, comprising:

forming an organic-based device, the forming including;

forming a first electrode;

forming an active material on the first electrode, the active material having a first structural portion that is a photo-active polymer configured to react to a UV wavelength and a second structural portion that is transparent to the UV wavelength, the second structural portion being electrically bi-stable; and

forming a second electrode on the active material, the active material in contact with, and interposed between, the first and second electrodes.

29. The method of claim 28, further comprising:

selectively applying the UV wavelength to exposed portions of the active material through a mask;

removing the exposed portions of the active material to form a memory element on the first electrode;

forming a dielectric layer adjacent to sides of the memory element; and

forming the second electrode on the memory element.

30. The method of claim 28, further comprising:

forming a plurality of memory cells in the organic-based device, the forming of the memory cells including;

forming a plurality of first electrodes while forming the first electrode;

selectively applying the UV wavelength to exposed portions of the active material through a mask, the mask having a plurality of openings defining the plurality of memory cells;

removing portions of the active material to form a plurality of memory elements on the first electrodes; and

forming a plurality of second electrodes while forming the second electrode on the plurality of memory elements.

31. The method of claim 30, further comprising:

forming the plurality of memory elements in an array, the forming including;

forming the plurality of first electrodes spaced apart from and parallel to each other;

forming the plurality of memory elements on the first electrodes, the memory elements spaced apart from each other on the first electrodes; and

forming the plurality of second electrodes spaced apart from and parallel to each other, the second electrodes being orthogonal to the first electrodes.