INDUCTIVE PLASMA SOURCE WITH METALLIC SHOWER HEAD USING B-FIELD CONCENTRATOR
First Claim
1. A lid assembly for a plasma chamber, comprising:
- a first annular inductive coil nested with a first conductive ring.
1 Assignment
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Accused Products
Abstract
A method and apparatus for plasma processing of substrates is provided. A processing chamber has a substrate support and a lid assembly facing the substrate support. The lid assembly has a plasma source that comprises an inductive coil disposed within a conductive plate, which may comprise nested conductive rings. The inductive coil is substantially coplanar with the conductive plate, and insulated therefrom by an insulator that fits within a channel formed in the conductive plate, or nests within the conductive rings. A field concentrator is provided around the inductive coil, and insulated therefrom by isolators. The plasma source is supported from a conductive support plate. A gas distributor supplies gas to the chamber through a central opening of the support plate and plasma source from a conduit disposed through the conductive plate.
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Citations
24 Claims
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1. A lid assembly for a plasma chamber, comprising:
a first annular inductive coil nested with a first conductive ring. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A lid assembly for a plasma chamber, comprising:
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a gas distributor; a support plate disposed around the gas distributor; a conductive ring disposed around the gas distributor and coupled to the support plate; an annular inductive coil disposed in an insulating channel nested with the conductive ring; and a field concentrator disposed in the insulating channel around the inductive coil. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A processing chamber for a semiconductor substrate, comprising:
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a chamber body defining an interior region; a substrate support disposed in the interior region; and a lid assembly disposed in the interior region facing the substrate support, the lid assembly comprising; a gas distributor; and a plasma source having a first conductive surface that faces the substrate support, a second conductive surface that faces away from the substrate support, and a plurality of conductive coils disposed in the conductive plasma source between the first surface and the second surface. - View Dependent Claims (16, 17, 18, 19)
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20. A method of processing a substrate, comprising:
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disposing the substrate on a substrate support in a processing chamber; providing a plasma source facing the substrate support, the plasma source comprising a plurality of conductive loops disposed in an electrode, to define a processing region between the plasma source and the substrate support; providing a gas mixture to the processing region; grounding the electrode; and forming a plasma from the gas mixture by applying electric power to the conductive loops. - View Dependent Claims (21, 22, 23, 24)
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Specification