SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME

• US 20110278538A1
• Filed: 05/10/2011
• Published: 11/17/2011
• Est. Priority Date: 05/11/2010
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: KIM, Yu Seung, KIM, Dae Cheon, SUNG, Youn Joon, KO, Hyung Duk, JUNG, Soo Jin, LEE, Byung Kwun, YANG, Jung Ja
• Granted Patent: US 8,993,993 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2933/0091 Scattering means in or on the semiconductor body or semiconductor body package H01L33/22 takes precedence
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

Provided are a semiconductor light emitting device and a method for fabricating the same. The semiconductor light emitting device includes a light emitting structure and a pattern. The light emitting structure includes a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer. The pattern is formed on at least one light emitting surface among the surfaces of the light emitting structure. The pattern has a plurality of convex or concave parts that are similar in shape. The light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner. The convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

Claims

1. A semiconductor light emitting device comprising:

a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer; and

a pattern formed on at least one light emitting surface among the surfaces of the light emitting structure, the pattern having a plurality of convex or concave parts that are similar in shape,

wherein the light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner, and the convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions.

2. The semiconductor light emitting device of claim 1, wherein the convex or concave parts arranged in one direction, among the plurality of convex or concave parts, are sequentially disposed in the reference regions in such a manner as to rotate around the centers of the reference regions in a clockwise or counterclockwise direction.

3. The semiconductor light emitting device of claim 1, wherein the light emitting structure is formed on a substrate, and the pattern is formed on the substrate.

4. The semiconductor light emitting device of claim 1, wherein the pattern is formed on the second-conductivity-type semiconductor layer.

5. The semiconductor light emitting device of claim 1, wherein the pattern is formed by etching a portion of the second-conductivity-type semiconductor layer.

6. The semiconductor light emitting device of claim 1, wherein the second-conductivity-type semiconductor layer is doped with n-type or p-type impurities.

7. The semiconductor light emitting device of claim 1, wherein the size of the reference region is equal to or greater than the size of the contact surface between the reference region and the convex or concave part.

8. The semiconductor light emitting device of claim 1, wherein the contact surfaces between the reference regions and the convex or concave parts have different sizes.

9. The semiconductor light emitting device of claim 8, wherein the convex or concave parts are arranged in ascending order of the size of the contact surface with the reference region to constitute a group, and the group is disposed in a repeated manner.

10. The semiconductor light emitting device of claim 1, wherein the reference region has a circular shape.

11. The semiconductor light emitting device of claim 10, wherein the reference region has a diameter of 0.1 μ

m to 5 μ

m.

12. The semiconductor light emitting device of claim 10, wherein the interval between the reference regions is equal to or smaller than 0.5 μ

m.

13. The semiconductor light emitting device of claim 1, wherein the contact surfaces between the reference regions and the convex or concave parts have a circular shape.

14. The semiconductor light emitting device of claim 13, wherein the contact surfaces between the reference regions and the convex or concave parts have a diameter of 0.1 μ

m to 5 μ

m.

15. The semiconductor light emitting device of claim 1, wherein the convex or concave parts have a shape similar to one of a hemispherical shape and a conical shape.

16. The semiconductor light emitting device of claim 1, wherein the contact surfaces between the reference regions and the convex or concave parts have the same shape.

17. A method for fabricating a semiconductor light emitting device, comprising:

forming a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer on a growth substrate;

forming a conductive substrate on the light emitting structure;

removing the growth substrate; and

forming a pattern on at least one light emitting surface among the surfaces of the light emitting structure exposed by removing the growth substrate,

wherein the light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner, the convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions, and the forming of the pattern is performed through a dry etching process.

19. The method of claim 17, wherein the convex or concave parts arranged in one direction, among the plurality of convex or concave parts, are sequentially disposed in the reference regions in such a manner as to rotate around the centers of the reference regions in a clockwise or counterclockwise direction.

18. A method for fabricating a semiconductor light emitting device, comprising:

forming a light emitting structure comprising a first-conductivity-type semiconductor layer, an active layer, and a second-conductivity-type semiconductor layer on a growth substrate; and

forming a pattern on at least one light emitting surface among the surfaces of the light emitting structure,

wherein the light emitting surface with the pattern formed thereon has a plurality of virtual reference regions that are equal in size and are arranged in a regular manner, the convex or concave part is disposed in the reference regions such that a part of the edge thereof is in contact with the outline of one of the plurality of virtual reference regions, and the forming of the pattern is performed through a dry etching process.