SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A semiconductor device comprising:
- an n-channel transistor;
a p-channel transistor; and
a transistor containing, in a channel formation region, a semiconductor material whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon,wherein the n-channel transistor and the p-channel transistor are connected to each other in series,wherein a logical value of a signal supplied to a first gate electrode included in the n-channel transistor accords with a logical value of a signal supplied to a first gate electrode included in the p-channel transistor,wherein the n-channel transistor or the p-channel transistor includes a second gate electrode which faces the first gate electrode with a channel formation region provided between the first gate electrode and the second gate electrode, andwherein supply of a potential to the second gate electrode is controlled by the transistor.
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Abstract
An n-channel transistor or a p-channel transistor provided with a second gate electrode for controlling a threshold voltage in addition to a normal gate electrode is used for a complementary logic circuit. In addition, an insulated gate field-effect transistor with an extremely low off-state current is used as a switching element to control the potential of the second gate electrode. A channel formation region of the transistor which functions as a switching element includes a semiconductor material whose band gap is wider than that of a silicon semiconductor and whose intrinsic carrier density is lower than that of silicon.
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Citations
26 Claims
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1. A semiconductor device comprising:
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an n-channel transistor; a p-channel transistor; and a transistor containing, in a channel formation region, a semiconductor material whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon, wherein the n-channel transistor and the p-channel transistor are connected to each other in series, wherein a logical value of a signal supplied to a first gate electrode included in the n-channel transistor accords with a logical value of a signal supplied to a first gate electrode included in the p-channel transistor, wherein the n-channel transistor or the p-channel transistor includes a second gate electrode which faces the first gate electrode with a channel formation region provided between the first gate electrode and the second gate electrode, and wherein supply of a potential to the second gate electrode is controlled by the transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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an n-channel transistor; a p-channel transistor; and a transistor containing, in a channel formation region, a semiconductor material whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon, wherein the n-channel transistor and the p-channel transistor are connected to each other in series, wherein a logical value of a signal supplied to a first gate electrode included in the n-channel transistor accords with a logical value of a signal supplied to a first gate electrode included in the p-channel transistor, wherein the n-channel transistor or the p-channel transistor includes a second gate electrode which faces the first gate electrode with a channel formation region provided between the first gate electrode and the second gate electrode, wherein supply of a potential to the second gate electrode is controlled by the transistor, and wherein silicon or germanium is used for the channel formation region of the n-channel transistor and the p-channel transistor. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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an n-channel transistor; a p-channel transistor; and a transistor containing, in a channel formation region, a semiconductor material whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon, wherein the n-channel transistor and the p-channel transistor are connected to each other in series, wherein a logical value of a signal supplied to a first gate electrode included in the n-channel transistor accords with a logical value of a signal supplied to a first gate electrode included in the p-channel transistor, and wherein a substrate potential of the n-channel transistor or the p-channel transistor is controlled by the transistor. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A semiconductor device comprising:
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an n-channel transistor; a p-channel transistor; and a transistor containing, in a channel formation region, a semiconductor material whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon, wherein the n-channel transistor and the p-channel transistor are connected to each other in series, wherein a logical value of a signal supplied to a first gate electrode included in the n-channel transistor accords with a logical value of a signal supplied to a first gate electrode included in the p-channel transistor, wherein a substrate potential of the n-channel transistor or the p-channel transistor is controlled by the transistor, and wherein silicon or germanium is used for the channel formation region of the n-channel transistor and the p-channel transistor. - View Dependent Claims (20, 21, 22, 23, 24)
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25. A semiconductor device comprising:
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an n-channel transistor; a p-channel transistor; and a transistor containing, in a channel formation region, a semiconductor material whose band gap is wider than that of silicon and whose intrinsic carrier density is lower than that of silicon, wherein the n-channel transistor and the p-channel transistor are connected to each other in series, wherein a logical value of a signal supplied to a first gate electrode included in the n-channel transistor accords with a logical value of a signal supplied to a first gate electrode included in the p-channel transistor, and wherein a threshold voltage of the n-channel transistor or the p-channel transistor is controlled by setting a potential supplied to a second gate electrode or a substrate potential of the n-channel transistor or the p-channel transistor. - View Dependent Claims (26)
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Specification