LIGHT-EMITTING DEVICE AND LIGHTING APPARATUS

• US 20110278634A1
• Filed: 05/16/2011
• Published: 11/17/2011
• Est. Priority Date: 05/17/2010
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: Suzhou Lekin Semiconductor Company Limited
• Inventors: Kim, SungKyoon, Choo, SungHo, NA, MinGyu, Lim, WooSik
• Granted Patent: US 10,886,436 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

Disclosed is a light-emitting device including, a light-emitting structure including a first conductive semiconductor layer including at least a first region and a second region, and an active layer and a second conductive semiconductor layer formed in the first region, a first electrode formed on the first conductive semiconductor layer, and a second electrode formed on the second conductive semiconductor layer. Current spreading and drive voltage can be improved and luminous efficacy of the light-emitting device can be enhanced.

Claims

1. A light-emitting device comprising:

a light-emitting structure comprising a first conductive semiconductor layer including at least a first region and a second region, and an active layer and a second conductive semiconductor layer formed in the first region;

a first electrode formed on the first conductive semiconductor layer; and

a second electrode formed on the second conductive semiconductor layer,

wherein the second region comprises;

a third region formed on at least one side of the light-emitting structure in a horizontal direction of the light-emitting structure; and

a fourth region formed inside the light-emitting structure in a horizontal direction of the light-emitting structure,

the first electrode comprises;

a first pad on one side of the first conductive semiconductor layer in a longitudinal direction of the first conductive semiconductor layer; and

a first branch which is formed in the fourth region, is connected to the first pad and extends in the longitudinal direction of the first conductive semiconductor layer,

the second electrode comprises;

a second pad on the other side of the second conductive semiconductor layer in a longitudinal direction of the second conductive semiconductor layer; and

a third branch and a fourth branch which are connected to the second pad and extend in the first pad direction,

wherein the first branch is spaced from a first mesa line to separate the fourth region from the first region, by a first distance,

at least one of the third and fourth branches is spaced from a second mesa line to separate the third region from the first region by a second distance, and

the second distance is greater than the first distance.

2. The light-emitting device according to claim 1, wherein the third and fourth branches are symmetrical to each other, based on the first branch.

3. The light-emitting device according to claim 2, wherein the distance between the first branch and the third branch is the same as the distance between the first branch and the fourth branch.

4. The light-emitting device according to claim 1, wherein the second distance is 3% to 15% of the horizontal length of the light-emitting structure.

5. The light-emitting device according to claim 1, wherein the second distance is 20 μ

m to 80 μ

m.

6. The light-emitting device according to claim 1, wherein the second distance is 35 μ

m to 50 μ

m.

7. The light-emitting device according to claim 1, wherein the at least one of the third and fourth branches includes a bend.

8. The light-emitting device according to claim 7, wherein the bend is curved.

12. The light-emitting device according to claim 1, wherein the second distance is 35 μ

m to 50 μ

m.

9. A light-emitting device comprising:

a light-emitting structure comprising a first conductive semiconductor layer including at least a first region and a second region, and an active layer formed and a second conductive semiconductor layer in the first region;

a first electrode formed on the first conductive semiconductor layer; and

a second electrode formed on the second conductive semiconductor layer,

wherein the second region comprises;

a third region formed on one side of the light-emitting structure in a horizontal direction of the light-emitting structure;

a fourth region formed inside the light-emitting structure in a horizontal direction of the light-emitting structure; and

a fifth region formed on the other side of the light-emitting structure in a horizontal direction of the light-emitting structure,

the first electrode comprises;

a first pad on one side of the first conductive semiconductor layer in a longitudinal direction of the first conductive semiconductor layer;

a first branch which is formed in the fourth region, is connected to the first pad and extends in the longitudinal direction of the light-emitting structure; and

a second branch which is formed in the third region, is connected to the first pad and extends in the longitudinal direction of the light-emitting structure,

the second electrode comprises;

a second pad on the other side of the second conductive semiconductor layer in a longitudinal direction of the second conductive semiconductor layer; and

a third branch and a fourth branch which are connected to the second pad and extend in the first pad direction,

wherein the first branch is spaced from a first mesa line to separate the third region from the first region, by a first distance,

at least one of the third and fourth branches is spaced from a second mesa line to separate the fifth region from the first region, by a second distance, and

the second distance is greater than the first distance.

10. The light-emitting device according to claim 9, wherein the second distance is 3% to 15% of the horizontal length of the light-emitting structure.

11. The light-emitting device according to claim 9, wherein the second distance is 20 μ

m to 80 μ

m.

13. The light-emitting device according to claim 9, wherein the third branch is spaced from the first mesa line by a third distance.

14. The light-emitting device according to claim 13, wherein the first distance is the same as the third distance, or is smaller than the third distance.

15. The light-emitting device according to claim 13, wherein the fourth branch is spaced from the fourth mesa line to separate the first region from the fourth region, by a fourth distance.

16. The light-emitting device according to claim 15, wherein the fourth distance is greater than the third distance.

17. The light-emitting device according to claim 15, wherein the first distance is the same as the fourth distance, or is smaller than the fourth distance.

18. The light-emitting device according to claim 9, wherein the at least one of the third and fourth branches includes a bend.

19. The light-emitting device according to claim 18, wherein at least one of the bends is curved.

20. A lighting apparatus including the light-emitting device according to claim 9.