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PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING

  • US 20110281438A1
  • Filed: 11/18/2008
  • Published: 11/17/2011
  • Est. Priority Date: 11/29/2007
  • Status: Active Grant
First Claim
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1. A method of etching a conductive layer through a mask with wider and narrower features, comprising:

  • (a) flowing a steady state etch gas;

    (b) providing a steady state RF power to form a plasma from the etch gas;

    (c) providing a pulsed bias voltage during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz; and

    (d) etching wider and narrower features into the conductive layer using the plasma formed from the etch gas.

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