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THROUGH SILICON VIA FILLING USING AN ELECTROLYTE WITH A DUAL STATE INHIBITOR

  • US 20110284386A1
  • Filed: 05/18/2011
  • Published: 11/24/2011
  • Est. Priority Date: 05/19/2010
  • Status: Active Grant
First Claim
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1. A method of electrochemically filling large high aspect ratio recessed features with metal without depositing a thick layer of metal on the field region of a substrate, the method comprising:

  • (a) providing a substrate having a large high aspect ratio recessed feature to an electroplating apparatus, wherein the recessed feature has a diameter or width of at least about 1 μ

    m and an aspect ratio of at least about 5;

    1, and;

    (b) electroplating metal in the recessed feature by contacting the substrate with an electroplating solution comprising (i) metal ions; and

    (ii) an organic dual-state inhibitor (DSI) configured for inhibiting metal deposition in the field region, while electrically biasing the substrate under potential-controlled conditions, wherein after filling the feature, the ratio of the metal layer thickness deposited on the field to the metal layer thickness deposited in the feature is not greater than about 0.05.

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