LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME
First Claim
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1. A light emitting diode (LED) chip, comprising:
- a substrate;
a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
an electrode electrically connected to the semiconductor stacked structure; and
a wavelength converting layer covering a portion of the semiconductor stacked structure,wherein the electrode passes through the wavelength converting layer.
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Abstract
An exemplary embodiment of the present invention discloses an LED chip including a substrate, a GaN-based compound semiconductor stacked structure arranged on the substrate, an electrode electrically connected to the semiconductor stacked structure, and a wavelength converting layer covering a portion of the semiconductor stacked structure. The electrode passes through the wavelength converting layer. The semiconductor stacked structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.
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Citations
20 Claims
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1. A light emitting diode (LED) chip, comprising:
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a substrate; a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; an electrode electrically connected to the semiconductor stacked structure; and a wavelength converting layer covering a portion of the semiconductor stacked structure, wherein the electrode passes through the wavelength converting layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light emitting diode (LED) package, comprising:
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a lead terminal; an LED chip; and a bonding wire connecting the lead terminal and the LED chip, wherein the LED chip comprises; a substrate; a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; an electrode electrically connected to the semiconductor stacked structure; and a wavelength converting layer covering a portion of the semiconductor stacked structure, wherein the electrode passes through the wavelength converting layer, and the bonding wire connects the electrode and the lead terminal. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification