LIGHT EMITTING DIODE CHIP HAVING WAVELENGTH CONVERTING LAYER AND METHOD OF FABRICATING THE SAME, AND PACKAGE HAVING THE LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME

• US 20110284822A1
• Filed: 03/25/2011
• Published: 11/24/2011
• Est. Priority Date: 05/18/2010
• Status: Active Grant

• Current Assignee: Seoul Semiconductor Co., Ltd.
• Original Assignee: Seoul Semiconductor Co., Ltd.
• Inventors: JUNG, Jung Hwa, KIM, Bang Hyun
• Granted Patent: US 8,664,635 B2
• Time in Patent Office: Days
• US Class Current: 257/13
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/50 Wavelength conversion elements
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin

Abstract

An exemplary embodiment of the present invention discloses an LED chip including a substrate, a GaN-based compound semiconductor stacked structure arranged on the substrate, an electrode electrically connected to the semiconductor stacked structure, and a wavelength converting layer covering a portion of the semiconductor stacked structure. The electrode passes through the wavelength converting layer. The semiconductor stacked structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.

Claims

1. A light emitting diode (LED) chip, comprising:

a substrate;

a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

an electrode electrically connected to the semiconductor stacked structure; and

a wavelength converting layer covering a portion of the semiconductor stacked structure,

wherein the electrode passes through the wavelength converting layer.

2. The LED chip of claim 1, wherein the electrode comprises a first electrode arranged on the semiconductor stacked structure, and a first additional electrode arranged on the first electrode.

3. The LED chip of claim 1, further comprising a spacer layer disposed between the wavelength converting layer and the semiconductor stacked structure.

4. The LED chip of claim 3, wherein the spacer layer comprises an insulating layer.

5. The LED chip of claim 3, wherein the spacer layer comprises a distribution Bragg reflector (DBR).

6. The LED chip of claim 5, wherein the spacer layer further comprises a stress relaxation layer disposed between the DBR and the semiconductor stacked structure.

7. The LED chip of claim 6, wherein the stress relaxation layer comprises a spin on glass (SOG) or a porous silicon oxide film.

8. The LED chip of claim 2, wherein the first additional electrode is narrower than the first electrode.

9. The LED chip of claim 8, wherein the width of the first additional electrode decreases in a direction away from the first electrode.

10. The LED chip of claim 2, further comprising a second electrode arranged on and electrically connected to the semiconductor stacked structure, and a second additional electrode arranged on the second electrode.

11. The LED chip of claim 2, wherein a top surface of the first additional electrode is flush with a top surface of the wavelength converting layer.

12. The LED chip of claim 11, wherein the top surface of the additional electrode and the top surface of the wavelength converting layer are substantially flat.

13. The LED chip of claim 11, wherein the top surface of the first additional electrode is opposite to the first electrode, and the first additional electrode top surface is not covered by the wavelength converting layer.

14. The LED chip of claim 1, wherein the electrode is electrically connected to the first conductivity-type semiconductor layer.

15. A light emitting diode (LED) package, comprising:

a lead terminal;

an LED chip; and

a bonding wire connecting the lead terminal and the LED chip,

wherein the LED chip comprises;

a substrate;

a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;

an electrode electrically connected to the semiconductor stacked structure; and

a wavelength converting layer covering a portion of the semiconductor stacked structure,

wherein the electrode passes through the wavelength converting layer, and the bonding wire connects the electrode and the lead terminal.

16. The LED package of claim 15, wherein the electrode comprises a first electrode arranged on the semiconductor stacked structure, and a first additional electrode arranged on the first electrode.

17. The LED package of claim 15, further comprising a spacer layer disposed between the wavelength converting layer and the semiconductor stacked structure.

18. The LED package of claim 16, wherein the first additional electrode is narrower than the first electrode.

19. The LED package of claim 18, wherein the width of the first additional electrode decreases in a direction away from the first electrode.

20. The LED package of claim 15, wherein the electrode is electrically connected to the first conductivity-type semiconductor layer.