SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a gate electrode;
a gate insulating layer covering the gate electrode;
an oxide semiconductor layer over the gate insulating layer;
a first source electrode and a first drain electrode in direct contact with the oxide semiconductor layer at a first region;
an insulating layer covering the oxide semiconductor layer, the first source electrode, and the first drain electrode; and
a second source electrode and a second drain electrode over the insulating layer, which are electrically connected to the first source electrode and the first drain electrode, respectively,wherein the first region is in a second region where the oxide semiconductor layer and the gate electrode overlap with each other,wherein a length of the oxide semiconductor layer in a channel length direction is longer than a length of the gate electrode in the channel length direction,wherein the second drain electrode includes a portion overlapping with the gate electrode, andwherein the oxide semiconductor layer is between the second drain electrode and the gate electrode at the portion.
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Abstract
In a transistor, a drain electrode to which a high electric field is applied is formed over a flat surface, and an end portion of a gate electrode on the drain electrode side in a channel width direction and an end portion of the gate electrode in a channel length direction are covered with an oxide semiconductor with a gate insulating layer between the gate electrode and the oxide semiconductor layer, so that withstand voltage of the transistor is improved. Further, a semiconductor device for high power application, in which the transistor is used, can be provided.
30 Citations
19 Claims
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1. A semiconductor device comprising:
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a gate electrode; a gate insulating layer covering the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first source electrode and a first drain electrode in direct contact with the oxide semiconductor layer at a first region; an insulating layer covering the oxide semiconductor layer, the first source electrode, and the first drain electrode; and a second source electrode and a second drain electrode over the insulating layer, which are electrically connected to the first source electrode and the first drain electrode, respectively, wherein the first region is in a second region where the oxide semiconductor layer and the gate electrode overlap with each other, wherein a length of the oxide semiconductor layer in a channel length direction is longer than a length of the gate electrode in the channel length direction, wherein the second drain electrode includes a portion overlapping with the gate electrode, and wherein the oxide semiconductor layer is between the second drain electrode and the gate electrode at the portion. - View Dependent Claims (6, 10, 14)
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2. A semiconductor device comprising:
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a gate electrode; a gate insulating layer covering the gate electrode; an oxide semiconductor layer over the gate insulating layer; a first source electrode and a first drain electrode in direct contact with the oxide semiconductor layer at a first region; a first insulating layer covering the oxide semiconductor layer, the first source electrode, and the first drain electrode; a first conductive layer over the first insulating layer; a second insulating layer covering the first conductive layer; and a second source electrode electrically connected to the first source electrode, a second drain electrode electrically connected to the first drain electrode, and a second conductive layer electrically connected to the first conductive layer, which are over the first insulating layer, wherein the first region is in a second region where the oxide semiconductor layer and the gate electrode overlap with each other, wherein a length of the oxide semiconductor layer in a channel length direction is longer than a length of the gate electrode in the channel length direction, wherein the second drain electrode includes a portion overlapping with the gate electrode, and wherein the oxide semiconductor layer is between the second drain electrode and the gate electrode at the portion. - View Dependent Claims (7, 11, 15, 18)
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3. A semiconductor device comprising:
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a gate electrode; a gate insulating layer covering the gate electrode; an oxide semiconductor layer over the gate insulating layer; a plurality of first source electrodes and a plurality of first drain electrodes which are in direct contact with the oxide semiconductor layer at a first region; an insulating layer covering the oxide semiconductor layer, the plurality of first source electrodes, and the plurality of first drain electrodes; and a second source electrode electrically connected to each of the first source electrodes and a second drain electrode electrically connected to each of the first drain electrodes, which are over the insulating layer, wherein the first region is in a second region where the oxide semiconductor layer and the gate electrode overlap with each other, wherein a length of the oxide semiconductor layer in a channel length direction is longer than a length of the gate electrode in the channel length direction, wherein the second drain electrode includes a portion overlapping with the gate electrode, and wherein the oxide semiconductor layer is between the second drain electrode and the gate electrode at the portion. - View Dependent Claims (8, 12, 16)
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4. A semiconductor device comprising:
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a gate electrode; a gate insulating layer covering the gate electrode; an oxide semiconductor layer over the gate insulating layer; a plurality of first source electrodes and a plurality of first drain electrodes which are in direct contact with the oxide semiconductor layer at a first region; a first insulating layer covering the oxide semiconductor layer, the plurality of first source electrodes, and the plurality of first drain electrodes; a first conductive layer over the first insulating layer; a second insulating layer covering the first conductive layer; and a second source electrode electrically connected to each of the first source electrodes, a second drain electrode electrically connected to each of the first drain electrodes, and a second conductive layer electrically connected to the first conductive layer, which are over the first insulating layer, wherein the first region is in a second region where the oxide semiconductor layer and the gate electrode overlap with each other, wherein a length of the oxide semiconductor layer in a channel length direction is longer than a length of the gate electrode in the channel length direction, wherein the second drain electrode includes a portion overlapping with the gate electrode, and wherein the oxide semiconductor layer is between the second drain electrode and the gate electrode at the portion. - View Dependent Claims (5, 9, 13, 17, 19)
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Specification