SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- an insulating layer;
a source electrode layer over the insulating layer;
a drain electrode layer over the insulating layer;
an oxide semiconductor layer over the source electrode layer and the drain electrode layer, the oxide semiconductor layer is in contact with a part of the insulating layer; and
a gate insulating layer on the oxide semiconductor layer,the concentration of hydrogen in the insulating layer is less than 6×
1020 atoms/cm3.
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Accused Products
Abstract
In a transistor having a top-gate structure in which a gate electrode layer overlaps with an oxide semiconductor layer which forms a channel region with a gate insulating layer interposed therebetween, when a large amount of hydrogen is contained in the insulating layer, hydrogen is diffused into the oxide semiconductor layer because the insulating layer is in contact with the oxide semiconductor layer; thus, electric characteristics of the transistor are degraded. An object is to provide a semiconductor device having favorable electric characteristics. An insulating layer in which the concentration of hydrogen is less than 6×1020 atoms/cm3 is used for the insulating layer being in contact with oxide semiconductor layer which forms the channel region. Using the insulating layer, diffusion of hydrogen can be prevented and a semiconductor device having favorable electric characteristics can be provided.
23 Citations
30 Claims
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1. A semiconductor device comprising:
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an insulating layer; a source electrode layer over the insulating layer; a drain electrode layer over the insulating layer; an oxide semiconductor layer over the source electrode layer and the drain electrode layer, the oxide semiconductor layer is in contact with a part of the insulating layer; and a gate insulating layer on the oxide semiconductor layer, the concentration of hydrogen in the insulating layer is less than 6×
1020 atoms/cm3. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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an insulating layer; an oxide semiconductor layer on the insulating layer; a source electrode layer over the oxide semiconductor layer; a drain electrode layer over the oxide semiconductor layer; and a gate insulating layer over the source electrode layer and the drain electrode layer, the gate insulating layer is in contact with a part of the oxide semiconductor layer, the concentration of hydrogen in the insulating layer is less than 6×
1020 atoms/cm3. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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an insulating layer; an oxide semiconductor layer over the insulating layer; a source electrode layer in contact with the oxide semiconductor layer; a drain electrode layer in contact with the oxide semiconductor layer; and a gate insulating layer over the source electrode layer and the drain electrode layer, the gate insulating layer is in contact with the oxide semiconductor layer, the concentration of hydrogen in the insulating layer is less than 6×
1020 atoms/cm3. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. A method for manufacturing a semiconductor device comprising the steps of:
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forming an insulating layer by plasma CVD using SiF4 as a deposition gas; forming a source electrode layer and a drain electrode layer over the insulating layer; forming a oxide semiconductor layer over the insulating layer; and forming a gate insulating layer over the source electrode layer, the drain electrode layer and the oxide semiconductor layer, wherein the source electrode layer is in contact with the oxide semiconductor layer; wherein the drain electrode layer is in contact with the oxide semiconductor layer; wherein the gate insulating layer is over the source electrode layer and the drain electrode layer, and the gate insulating layer is in contact with the oxide semiconductor layer, and wherein the concentration of hydrogen in the insulating layer is less than 6×
1020 atoms/cm3. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30)
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Specification