SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate of a first conductivity type having a first major surface and a second major surface facing to each other;
a first well of a second conductivity type in an upper surface of the first major surface in a cell region of the first major surface;
a diffusion region of a first conductivity type in the upper surface of the first major surface in the first well;
a first gate insulating film on the first well;
a first gate electrode on the first gate insulating film;
a second well of a second conductivity type in the upper surface of the first major surface on a peripheral portion of the cell region;
a second gate insulating film on the second well;
a field oxide film on the second well on the peripheral side than the second gate insulating film and being thicker than the second gate insulating film;
a second gate electrode provided sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode;
a first electrode electrically connected to the first well, the second well and the diffusion region;
a second electrode on the second major surface of the semiconductor substrate;
a gate wiring on the field oxide film, going around a periphery of the cell region, and electrically connected to the second gate electrode; and
a gate pad electrically connected to the gate wiring,wherein the gate wiring is a silicide of a constituting substance of the second gate electrode.
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Accused Products
Abstract
In a cell region of a first major surface of a semiconductor substrate of a first conductivity type, a first well of a second conductivity type is in an upper surface. A diffusion region of a first conductivity type is in the upper surface in the first well. A first gate insulating film is on the first well, and a first gate electrode on the first gate insulating film. A second well of a second conductivity type is in the upper surface of the first major surface on a peripheral portion of the cell region. A second gate insulating film is on the second well, and a thick field oxide film is on the peripheral side than the second gate insulating film. A second gate electrode is sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode. A first electrode is connected to the first, second well and the diffusion region. A second electrode is connected on a second major surface of the semiconductor substrate. A gate wiring is on the field oxide film, going around a periphery of the cell region, and electrically connected to the second gate electrode. The gate wiring is a silicide of a constituting substance of the second gate electrode.
33 Citations
9 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate of a first conductivity type having a first major surface and a second major surface facing to each other; a first well of a second conductivity type in an upper surface of the first major surface in a cell region of the first major surface; a diffusion region of a first conductivity type in the upper surface of the first major surface in the first well; a first gate insulating film on the first well; a first gate electrode on the first gate insulating film; a second well of a second conductivity type in the upper surface of the first major surface on a peripheral portion of the cell region; a second gate insulating film on the second well; a field oxide film on the second well on the peripheral side than the second gate insulating film and being thicker than the second gate insulating film; a second gate electrode provided sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode; a first electrode electrically connected to the first well, the second well and the diffusion region; a second electrode on the second major surface of the semiconductor substrate; a gate wiring on the field oxide film, going around a periphery of the cell region, and electrically connected to the second gate electrode; and a gate pad electrically connected to the gate wiring, wherein the gate wiring is a silicide of a constituting substance of the second gate electrode. - View Dependent Claims (3, 4, 5, 6, 7)
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2. The semiconductor device according to claim 2, wherein the first electrode is connected to the second well in the interior side than the second gate electrode and the second gate insulating film on the first major surface,
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8. A method for manufacturing a semiconductor device comprising:
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preparing a semiconductor substrate of a first conductivity type having a first major surface and a second major surface facing to each other; forming a first well of a second conductivity type in an upper surface of the first major surface in a cell region of the first major surface and a second well of a second conductivity type in the upper surface of the first major surface on a peripheral portion of the cell region; forming a diffusion region of a first conductivity type in the upper surface of the first major surface in the first well; forming a first gate insulating film on the first well and a second gate insulating film on the second well; forming a field oxide film on the second well on the peripheral side than the second gate insulating film and being thicker than the second gate insulating film; forming a first gate electrode on the first gate insulating film; forming a second gate electrode sequentially on the second gate insulating film and the field oxide film and electrically connected to the first gate electrode; forming an interlayer insulating film on the first major surface so as to cover the first gate electrode and the second gate electrode; etching the interlayer insulating film to form a first contact hole on the first well and the diffusion region and a second contact hole on the second well; etching the interlayer insulating film to expose a part of the second gate electrode; forming a gate wiring going around a periphery of the cell region on the field oxide film by a silicidation of the exposed part of the second gate electrode; forming a first electrode electrically connected to the first well and the diffusion region via the first contact hole and electrically connected to the second well via the second contact hole; forming a second electrode on the second major surface of the semiconductor substrate; and forming a gate pad electrically connected to the gate wiring. - View Dependent Claims (9)
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Specification