HIGH EFFICIENCY GROUP III NITRIDE LED WITH LENTICULAR SURFACE
First Claim
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1. A high efficiency Group III nitride light emitting diode comprising:
- a substrate selected from the group consisting of semiconducting and conducting materials;
a Group III nitride-based light emitting region on said substrate; and
a lenticular surface extending to said light emitting region.
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Abstract
A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region, and extending to said light emitting region.
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Citations
33 Claims
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1. A high efficiency Group III nitride light emitting diode comprising:
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a substrate selected from the group consisting of semiconducting and conducting materials; a Group III nitride-based light emitting region on said substrate; and a lenticular surface extending to said light emitting region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A high efficiency Group III nitride light emitting diode comprising:
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a conductive silicon carbide substrate; an aluminum indium gallium nitride light emitting region on said substrate; and a thin lenticular surface of silicon carbide on said light emitting region and having features extending to said light emitting region. - View Dependent Claims (16, 17, 18, 19, 20)
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21. A high efficiency Group III nitride light emitting diode comprising:
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a substrate selected from the group consisting of conducting and semiconducting materials; at least one metal bonding layer on one surface of said substrate; an ohmic contact to the opposite surface of said substrate from said metal layer; a light emitting structure based upon the Group III nitride system on said at least one metal layer on said substrate; an ohmic contact on said light emitting structure opposite said substrate; and a lenticular surface having features extending to said light emitting structure, at least portions of which are formed of silicon carbide, on the portions of said light emitting structure other than said ohmic contact. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28)
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29. A high efficiency Group III nitride light emitting diode comprising:
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a silicon carbide substrate; a backside ohmic contact on one surface of said substrate for providing one electrical connection to said diode; a metal bonding layer on the opposite surface of said substrate for providing a physical and electronic transition between said substrate and other portions of said diode; a mirror layer on said metal bonding layer for enhancing light extraction from said diode; a p-type Group III nitride layer on said mirror; a light emitting Group III nitride layer on said p-type layer and having a bandgap smaller than the bandgap of said p-type layer; an n-type Group III nitride layer on said light emitting layer and having a bandgap larger than the bandgap of said light emitting layer; a wire bond pad ohmic contact to said n-type layer for providing a second electrical connection to said diode; and a lenticular surface, at least portions of which are formed of silicon carbide, on and having features extending to portions of said n-type layer other than said wire bond pad. - View Dependent Claims (30, 31)
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32. A high-efficiency Group III nitride light emitting diode package comprising:
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a lead frame; and a light emitting diode on said lead frame; said diode including, a substrate selected from the group consisting of semiconducting and conducting materials; a Group III nitride based light emitting region on said substrate; a lenticular surface containing silicon carbide on and extending to said light emitting region; an ohmic contact between said substrate and said lead frame; and an ohmic contact to said light emitting region.
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33. A wafer structure for high efficiency Group III nitride light emitting diode precursors, said wafer structure comprising:
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a conductive silicon carbide substrate wafer; a Group III nitride epitaxial layer on said substrate; a plurality of discrete ohmic contacts on the surface of said Group III nitride epitaxial layer, said ohmic contacts defining a plurality of discrete light emitting diode precursors; and a lenticular surface containing silicon carbide and on said Group III nitride epitaxial layer, said lenticular surface having features extending to said epitaxial layer.
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Specification