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SEMICONDUCTOR LIGHT EMITTING DEVICE, SEMICONDUCTOR LIGHT EMITTING APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

  • US 20110284908A1
  • Filed: 08/02/2011
  • Published: 11/24/2011
  • Est. Priority Date: 02/20/2009
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device, comprising:

  • a stacked structural body including a first semiconductor layer, a second semiconductor layer, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer;

    a first electrode electrically connected to the first semiconductor layer;

    a second electrode forming an ohmic contact with the second semiconductor layer, the second electrode being translucent to light emitted from the light emitting layer;

    a third electrode penetrating through the second electrode and electrically connected to the second electrode to form Shottky contact with the second semiconductor layer; and

    a fourth electrode, the third electrode being disposed between the fourth electrode and the second semiconductor layer, a shape of the fourth electrode as viewed along a stacking direction of the first semiconductor layer, the light emitting layer, and the second semiconductor layer being same as a shape of the third electrode as viewed along the stacking direction.

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