METHOD FOR FORMING SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20110287593A1
• Filed: 05/13/2011
• Published: 11/24/2011
• Est. Priority Date: 05/20/2010
• Status: Abandoned Application

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: YONEMITSU, Yutaka, ENDO, Taichi
• Application Number:
  US13/107,057
• Publication Number:
  US 20110287593A1
• Time in Patent Office: Days
• US Class Current: 438/197
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02631 Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

An object is to provide a method for forming an oxide semiconductor film with little variation in electrical characteristics. Another object is to provide a method for manufacturing a semiconductor device including an oxide semiconductor film with little variation in electrical characteristics. To reduce the amount of light scattered by a substrate stage or the amount of the scattered light which travels to enter a light-transmitting oxide semiconductor layer when the light-transmitting oxide semiconductor layer is patterned, a layer having a function of preventing light transmission may be provided in a lower layer than a photoresist layer so that light does not reach the substrate stage. In addition, a semiconductor device may be manufactured using the oxide semiconductor layer formed by the above patterning method.

Claims

1. A method for manufacturing a semiconductor device, comprising:

forming a layer comprising an oxide semiconductor over a light-transmitting substrate;

forming an anti-light transmission layer which absorbs or reflects light within a wavelength band absorbed by the oxide semiconductor, over the layer comprising the oxide semiconductor;

forming a photoresist layer over the anti-light transmission layer;

irradiating the photoresist layer with the light to form a resist mask over the anti-light transmission layer;

patterning the anti-light transmission layer by using the resist mask; and

removing the layer comprising the oxide semiconductor except for a portion which overlaps with the patterned anti-light transmission layer.

2. The method according to claim 1, wherein the anti-light transmission layer comprises silicon or aluminum.

3. The method according to claim 1, wherein a wavelength of the light is 365 nm or lower.

4. The method according to claim 1, wherein the light has a spectrum of a high pressure mercury lamp.

5. The method according to claim 1 further comprising:

removing the anti-light transmission layer.

6. A method for manufacturing a semiconductor device, comprising:

forming an anti-light transmission layer which absorbs or reflects light within a wavelength band absorbed by an oxide semiconductor, over a light-transmitting substrate,

forming a layer comprising the oxide semiconductor over the anti-light transmission layer;

forming a photoresist layer over the layer comprising the oxide semiconductor;

irradiating the photoresist layer with the light to form a resist mask over the layer comprising the oxide semiconductor; and

removing the layer comprising the oxide semiconductor except for a portion overlapping with the resist mask.

7. The method according to claim 6, wherein the anti-light transmission layer comprises silicon or aluminum.

8. The method according to claim 6, wherein a wavelength of the light is 365 nm or lower.

9. The method according to claim 6, wherein the light has a spectrum of a high pressure mercury lamp.

10. The method according to claim 6 further comprising:

forming an insulating film between the anti-light transmission layer and the layer comprising the oxide semiconductor.

11. A method for manufacturing a semiconductor device, comprising:

forming a source electrode layer and a drain electrode layer which are apart form each other over a light-transmitting substrate;

forming a layer comprising an oxide semiconductor which covers end portions of the source electrode layer and the drain electrode layer and a space between the source electrode layer and the drain electrode layer;

forming an anti-light transmission layer which absorbs or reflects light within a wavelength band absorbed by the oxide semiconductor, over the layer comprising the oxide semiconductor;

forming a photoresist layer over the anti-light transmission layer;

irradiating the photoresist layer with the light to form a resist mask which overlaps with the end portions of the source electrode layer and the drain electrode layer and the space over the anti-light transmission layer;

patterning the anti-light transmission layer by using the resist mask;

removing the layer comprising the oxide semiconductor except for a portion which overlaps with the patterned anti-light transmission layer;

forming a gate insulating layer in contact with the layer comprising the oxide semiconductor; and

forming a gate electrode layer so that it is in contact with the gate insulating layer and overlaps with the space.

12. The method according to claim 11, wherein the anti-light transmission layer comprises silicon or aluminum.

13. The method according to claim 11, wherein a wavelength of the light is 365 nm or lower.

14. The method according to claim 11, wherein the light has a spectrum of a high pressure mercury lamp.

15. The method according to claim 11 further comprising:

removing the anti-light transmission layer.

16. A method for manufacturing a semiconductor device, comprising:

forming an anti-light transmission layer which absorbs or reflects light within a wavelength band absorbed by an oxide semiconductor, over a light-transmitting substrate;

forming a layer comprising the oxide semiconductor over the anti-light transmission layer;

forming a photoresist layer over the layer comprising the oxide semiconductor;

irradiating the photoresist layer with the light to form a resist mask over the layer comprising the oxide semiconductor;

removing the layer comprising the oxide semiconductor except for a portion overlapping with the resist mask;

forming a source electrode layer and a drain electrode layer which are apart from each other and in contact with the layer comprising the oxide semiconductor;

forming a gate insulating layer in contact with the layer comprising the oxide semiconductor and end portions of the source electrode layer and the drain electrode layer;

forming a gate electrode layer which is in contact with the gate insulating layer and overlaps with the layer comprising the oxide semiconductor and a space between the source electrode layer and the drain electrode layer.

17. The method according to claim 16, wherein the anti-light transmission layer comprises silicon or aluminum.

18. The method according to claim 16, wherein a wavelength of the light is 365 nm or lower.

19. The method according to claim 16, wherein the light has a spectrum of a high pressure mercury lamp.

20. The method according to claim 16 further comprising:

forming an insulating film between the anti-light transmission layer and the layer comprising the oxide semiconductor.