ULTRA HIGH SELECTIVITY ASHABLE HARD MASK FILM
First Claim
1. A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, comprising:
- introducing a hydrocarbon source into the processing chamber;
introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10;
1 to about 20;
1;
generating a plasma in the processing chamber at a substantially lower pressure of about 1 Torr to 10 Torr; and
forming a conformal amorphous carbon layer on the substrate.
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Abstract
A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.
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Citations
20 Claims
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1. A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, comprising:
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introducing a hydrocarbon source into the processing chamber; introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10;
1 to about 20;
1;generating a plasma in the processing chamber at a substantially lower pressure of about 1 Torr to 10 Torr; and forming a conformal amorphous carbon layer on the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of forming a semiconductor device in a processing chamber, comprising:
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forming an amorphous carbon layer on a substrate by introducing a gas mixture into the processing chamber, wherein the gas mixture comprises a hydrocarbon source, a plasma-initiating gas, and a diluent gas consisting of argon and hydrogen into the processing chamber, wherein the argon and hydrogen have a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 20;
1.4;
1;generating a plasma in the processing chamber to decompose the hydrocarbon source in the gas mixture to form the amorphous carbon layer on the substrate; defining a pattern in at least one region of the amorphous carbon layer; and transferring the pattern defined in the at least one region of the amorphous carbon layer into the substrate using the amorphous carbon layer as a mask. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification