SUPERCRITICAL DRYING METHOD

• US 20110289793A1
• Filed: 12/22/2010
• Published: 12/01/2011
• Est. Priority Date: 05/25/2010
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Kitajima, Yukiko, HAYASHI, Hidekazu, Tomita, Hiroshi, Sato, Yohei, Okuchi, Hisashi
• Application Number:
  US12/976,593
• Publication Number:
  US 20110289793A1
• Time in Patent Office: Days
• US Class Current: 34/357
• CPC Class Codes: F26B 3/04 the gas or vapour circulating over or surrounding the materials or objects to be dried F26B3/14 takes precedence
• CPC Class Codes: H01L 21/67034 for drying

Abstract

According to one embodiment, a semiconductor substrate having a surface wetted with a chemical solution is introduced into a chamber, and a supercritical fluid is supplied into the chamber. The temperature in the chamber is adjusted to the critical temperature of the chemical solution or higher, so that the chemical solution is put into a supercritical state. The pressure in the chamber is then lowered, and the chemical solution in the critical state is turned into gaseous matter. The gaseous matter is then discharged from the chamber.

Claims

1. A supercritical drying method, comprising:

introducing a semiconductor substrate having a surface wetted with a chemical solution into a chamber;

supplying a supercritical fluid into the chamber;

putting the chemical solution into a supercritical state by adjusting temperature in the chamber to critical temperature of the chemical solution or higher; and

turning the chemical solution in the supercritical state into gaseous matter by lowering pressure in the chamber, and discharging the gaseous matter from the chamber.

2. The supercritical drying method according to claim 1, further comprising:

cleaning the semiconductor substrate by using a second chemical solution;

after cleaning the semiconductor substrate, rinsing the semiconductor substrate by using pure water; and

rinsing the semiconductor substrate by using the chemical solution, the chemical solution being alcohol, after rinsing the semiconductor substrate by using pure water and before introducing the semiconductor substrate into the chamber.

3. The supercritical drying method according to claim 1, wherein the supercritical fluid is maintained in a supercritical state until the chemical solution is put into the supercritical state, and, after the chemical solution is put into the supercritical state, the supercritical fluid is turned into gaseous matter.

4. The supercritical drying method according to claim 3, wherein the pressure in the chamber is maintained at a constant pressure until the chemical solution is put into the supercritical state.

5. The supercritical drying method according to claim 4, wherein, when the pressure in the chamber is reduced, the temperature in the chamber is maintained at the critical temperature of the chemical solution or higher.

6. The supercritical drying method according to claim 1, wherein the supercritical fluid is carbon dioxide.

7. The supercritical drying method according to claim 6, wherein the chemical solution is isopropyl alcohol.

8. The supercritical drying method according to claim 7, wherein the critical temperature is 235.2°

C.

9. The supercritical drying method according to claim 6, wherein the chemical solution is one of ethanol, methanol, hydrofluoroether, alcohol fluoride, diethylether, and ethylmethylether.