SOLAR CELL AND SOLAR CELL MANUFACTURING METHOD
First Claim
1. A solar cell comprising:
- an N-type semiconductor layer on one side of a light absorbing layer containing quantum dots in a matrix layer and a P-type semiconductor layer on the other side of the light absorbing layer,wherein the quantum dots are made of nanocrystalline semiconductor, the quantum dots being arranged 3-dimensionally uniformly enough and spaced regularly so that a plurality of wave functions lie on one another between adjacent quantum dots to form intermediate bands, andwherein the matrix layer is formed of amorphous IGZO.
1 Assignment
0 Petitions
Accused Products
Abstract
A solar cell capable of restricting carrier loss and yields higher energy conversion efficiency than was conventionally possible and a method of producing a solar cell enabling formation of a light absorbing layer containing quantum dots through a low-temperature process using a coating or printing method requiring no vacuum equipment or complicated apparatuses. The solar cell includes a light absorbing layer containing quantum dots in a matrix layer, and the light absorbing layer is connected to an N-type semiconductor layer on one side and to a P-type semiconductor layer on the other side. In the light absorbing layer, the quantum dots are made of nanocrystalline semiconductor and arranged 3-dimensionally uniformly enough and spaced regularly so that a plurality of wave functions lie on one another between adjacent quantum dots to form intermediate bands. The matrix layer is formed of amorphous IGZO.
-
Citations
16 Claims
-
1. A solar cell comprising:
-
an N-type semiconductor layer on one side of a light absorbing layer containing quantum dots in a matrix layer and a P-type semiconductor layer on the other side of the light absorbing layer, wherein the quantum dots are made of nanocrystalline semiconductor, the quantum dots being arranged 3-dimensionally uniformly enough and spaced regularly so that a plurality of wave functions lie on one another between adjacent quantum dots to form intermediate bands, and wherein the matrix layer is formed of amorphous IGZO. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of manufacturing a solar cell comprising an N-type semiconductor layer on one side of a light absorbing layer containing quantum dots in a matrix layer formed of amorphous IGZO and a P-type semiconductor layer on the other side of the light absorbing layer, the P-type semiconductor layer having a first electrode layer on a side opposite from the light absorbing layer, the N-type semiconductor layer having a second electrode layer on a side opposite from the light absorbing layer,
wherein a step of forming the light absorbing layer comprises: -
a step of applying or printing a mixture of a first IGZO precursor in a state of liquid and a particle dispersed solution in which particles forming the quantum dots are dispersed in a solvent onto the N-type semiconductor layer or the P-type semiconductor layer and a heat treatment step to vaporize the solvent contained in the mixture. - View Dependent Claims (11, 12, 13, 14, 15, 16)
-
Specification