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FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

  • US 20110291092A1
  • Filed: 05/24/2011
  • Published: 12/01/2011
  • Est. Priority Date: 06/01/2010
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising:

  • a substrate;

    a first wiring over the substrate;

    an insulating film over the first wiring;

    a semiconductor layer over the insulating film;

    an oxide insulating layer over the semiconductor layer; and

    a second wiring over the oxide insulating layer, the second wiring being in contact with the semiconductor layer through an opening in the oxide insulating layer,wherein the insulating film comprises substantially the same shape as the first wiring.

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