ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME
First Claim
1. A method of fabricating an array substrate, comprising:
- forming a gate electrode on a substrate;
forming a gate insulating layer on the gate electrode;
forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask;
forming source and drain electrodes on the etch prevention layer; and
forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer; and
forming a pixel electrode on the passivation layer and through the contact hole.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the method includes forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask, forming source and drain electrodes on the etch prevention layer, and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer, and forming a pixel electrode on the passivation layer and through the contact hole.
-
Citations
20 Claims
-
1. A method of fabricating an array substrate, comprising:
-
forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an oxide semiconductor layer and an etch prevention layer on the gate insulating layer using a single mask; forming source and drain electrodes on the etch prevention layer; and forming a passivation layer including a contact hole on the source and drain electrodes and on the gate insulating layer; and forming a pixel electrode on the passivation layer and through the contact hole. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A method of fabricating an array substrate, comprising:
-
forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an oxide semiconductor layer material on the gate insulating layer; turning an upper portion of the oxide semiconductor layer material into an etch prevention layer material; forming a metal layer on the etch prevention layer material; forming an oxide semiconductor layer, an etch prevention layer, and source and drain electrodes by patterning the oxide semiconductor layer material, the etch prevention layer material and the metal layer using a single mask; forming a passivation layer including a contact hole on the source and drain electrodes and the gate insulating layer; and forming a pixel electrode on the passivation layer and through the contact hole. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
-
-
19. An array substrate for a display device, the array substrate comprising:
-
a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole. - View Dependent Claims (20)
-
Specification