OPTOELECTRONIC DEVICE

• US 20110291129A1
• Filed: 11/13/2009
• Published: 12/01/2011
• Est. Priority Date: 11/14/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph
• Granted Patent: US 9,398,664 B2
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05B 31/50 specially adapted for ac
• CPC Class Codes: H05B 45/20 Controlling the colour of the light
• CPC Class Codes: H05B 45/28 using temperature feedback

Abstract

An optoelectronic device that emits mixed light includes light in a first and a second wavelength range, including a first semiconductor light source having a first light-emitting diode, which during operation emits light in the first wavelength range with a first intensity; a second semiconductor light source having a second light-emitting diode, which during operation emits light in the second wavelength range with a second intensity, wherein the first and second wavelength ranges are different from one another; and a resistance element having a temperature-dependent electrical resistance, wherein the first wavelength and/or the first intensity of the light emitted by the first semiconductor light source have/has a first temperature dependence, and the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source have/has a second temperature dependence, which is different from the first temperature dependence, the resistance element and the first semiconductor light source form a series circuit, and the series circuit and the second semiconductor light source form a parallel circuit.

Claims

1. An optoelectronic device that emits mixed light comprising light in a first and a second wavelength range, comprising:

a first semiconductor light source having a first lightemitting diode, which during operation emits light in the first wavelength range with a first intensity;

a second semiconductor light source having a second light-emitting diode, which during operation emits light in the second wavelength range with a second intensity, wherein the first and second wavelength ranges are different from one another; and

resistance element having a temperature-dependent electrical resistance, wherein

the first wavelength and/or the first intensity of the light emitted by the first semiconductor light source have/has a first temperature dependence; and

the second wavelength range and/or the second intensity of the light emitted by the second semiconductor light source have/has a second temperature dependence, which is different from the first temperature dependence;

the resistance element and the first semiconductor light source form a series circuit; and

the series circuit and the second semiconductor light source form a parallel circuit.

2. The device according to claim 1, wherein

the first temperature dependence is less than the second temperature dependence;

and

the resistance element is a resistance element having a positive temperature coefficient.

3. The device according to claim 2, wherein the resistance element comprises platinum or silicon.

4. The device according to claim 1, wherein

the first temperature dependence is greater than the second temperature dependence;

and

the resistance element is a resistance element having a negative temperature coefficient.

5. The device according to claim 1, wherein electrical resistance of the resistance element varies continuously in a temperature range of −

40°

C. to 125°

C.

6. The device according to claim 1, further comprising at least one electronic component in the parallel circuit that sets the mixed light at a predetermined temperature, wherein the at least one electronic component is selected from a fixed resistor, a variable resistor or a transistor.

7. The device according to any of the preceding claim 1, wherein

the parallel circuit is connected in series with at least one third semiconductor light source;

and

the third semiconductor light source has at least one further first light-emitting diode.

8. The device according to claim 7, wherein the third semiconductor light source has at least one electronic component that sets a relative intensity ratio of the third semiconductor light source and the parallel circuit at a predetermined temperature.

9. The device according to claim 8, wherein

the third semiconductor light source has at least one third light-emitting diode, which during operation emits light in a third wavelength range, which is different from the first wavelength range;

and

the at least one electronic component sets a relative intensity ratio of the first light-emitting diode and the third light-emitting diode in the third semiconductor light source at a predetermined temperature.

10. The device according to claim 1, wherein the resistance element is in thermal contact at least with the first semiconductor light source via a heat conductor.

11. The device according to claim 1, wherein

the first semiconductor light source is applied directly on the resistance element.

12. The device according to claim 1, wherein

the resistance element is a carrier substrate for the first light-emitting diode.

13. The device according to claim 1, wherein the optoelectronic device furthermore comprises a housing containing the first and second semiconductor light sources and the resistance element.

14. The device according to claim 1, further comprising a first housing with the first semiconductor light source and the resistance element and a second housing with the second semiconductor light source, wherein the first and second housings are in thermal contact.

15. The device according to claim 1, wherein the mixed light in a temperature range of 0°

C. to 100°

C. has a temperature-dependent color locus shift by an average color locus, which shift runs along a major axis of a MacAdams ellipse around the average, color locus.