LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE

• US 20110291140A1
• Filed: 05/26/2011
• Published: 12/01/2011
• Est. Priority Date: 05/27/2010
• Status: Abandoned Application

• Current Assignee: LG Innotek Company Limited (LG Corporation)
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Jeon, Joon Woo, Park, Seong Han, Jung, Se Yeon, Moon, Ji hyung, Song, June O, Choi, Kwang Ki, Seong, Tae Yeon, Lee, Sang Youl
• Application Number:
  US13/116,192
• Publication Number:
  US 20110291140A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12032 Schottky diode
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

Provided is a light emitting device. The light emitting device includes a light emitting structure layer including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a gallium barrier layer on the light emitting structure layer, and a metal electrode layer on the gallium barrier layer.

Claims

1. A light emitting device comprising:

a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a gallium barrier layer on the light emitting structure layer; and

a metal electrode layer on the gallium barrier layer.

2. The light emitting device according to claim 1, wherein the gallium barrier layer is a metal layer comprising gallium.

3. The light emitting device according to claim 2, wherein the gallium barrier layer comprises at least one of Al, Ti, Ta, Cr, Mn, V, Nb, Hf, Zr, and Zn.

4. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Al and has a weight ratio of about 1% to about 17% with respect to the Al.

5. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Ti and has a weight ratio of about 1% to about 14% with respect to the Ti.

6. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Ta and has a weight ratio of about 1% to about 14% with respect to the Ta.

7. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Cr and has a weight ratio of about 1% to about 15% with respect to the Cr.

8. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Mn and has a weight ratio of about 1% to about 10% with respect to the Mn.

9. The light emitting device according to claim 2, wherein the gallium barrier layer comprises V and has a weight ratio of about 1% to about 15% with respect to the V.

10. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Nb and has a weight ratio of about 1% to about 5% with respect to the Nb.

11. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Hf and has a weight ratio of about 0.3% to about 3% with respect to the Hf.

12. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Zr and has a weight ratio of about 0.2% to about 1% with respect to the Zr.

13. The light emitting device according to claim 2, wherein the gallium barrier layer comprises Zn and has a weight ratio of about 0.5% to about 4% with respect to the Zn.

14. The light emitting device according to claim 1, wherein the metal electrode layer is formed of at least one of Cr, Ni, Au, Ti, and Al.

15. The light emitting device according to claim 1, wherein the first conductive type semiconductor layer is doped with an N-type dopant.

16. The light emitting device according to claim 1, further comprising a conductive support member under the second conductive type semiconductor layer and at least one of an ohmic layer, a reflective layer, and an adhesion layer between the second conductive type semiconductor layer and the conductive support member.

17. The light emitting device according to claim 1, further comprising a current blocking layer under the second conductive type semiconductor layer.

18. A light emitting device package comprising:

a body;

first and second electrode layers disposed on the body; and

a light emitting device disposed on the body and electrically connected to the first and second electrode layers,

wherein the light emitting device comprises;

a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;

a gallium barrier layer on the light emitting structure layer; and

a metal electrode layer on the gallium barrier layer.

19. The light emitting device package according to claim 18, wherein the gallium barrier layer is a metal layer comprising gallium.

20. The light emitting device package according to claim 19, wherein the gallium barrier layer is formed of at least one of Al, Ti, Ta, Cr, Mn, V, Nb, Hf, Zr, and Zn.