SEMICONDUCTOR LIGHT-EMITTING ELEMENT

• US 20110291141A1
• Filed: 05/27/2011
• Published: 12/01/2011
• Est. Priority Date: 05/28/2010
• Status: Active Grant

• Current Assignee: Citizen Watch Co Limited (Citizen Electronics Company Limited)
• Original Assignee: Citizen Electronics Company Limited, Citizen Holdings Co., Ltd.
• Inventors: SORIMACHI, Kazuaki
• Granted Patent: US 8,581,285 B2
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

The present invention is directed to the provision of a semiconductor light-emitting element that has an electrode formed with a desired thickness using a plated metal layer. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate includes a semiconductor layer including a light-emitting layer, an N-side bump electrode for connecting the semiconductor layer to the circuit substrate, and a P-type bump electrode for connecting the semiconductor layer to the circuit substrate, wherein the N-side bump electrode and the P-type bump electrode each include an under-bump metal layer and a plated metal layer, the under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces the semiconductor layer and a metal layer disposed on a side opposite from the semiconductor layer, and the plated metal layer has a thickness not less than 3 μm but not greater than 30 μm.

Claims

1. A semiconductor light-emitting element for flip-chip mounting on a circuit substrate, comprising:

a semiconductor layer including a light-emitting layer;

an N-side bump electrode for connecting said semiconductor layer to said circuit substrate; and

a P-type bump electrode for connecting said semiconductor layer to said circuit substrate,

wherein said N-side bump electrode and said P-type bump electrode each include an under-bump metal layer and a plated metal layer,

said under-bump metal layer includes a high-reflectivity metal layer disposed on a side that faces said semiconductor layer and a metal layer disposed on a side opposite from said semiconductor layer, and

said plated metal layer has a thickness not smaller than 3 μ

m but not larger than 30 μ

m.

2. The semiconductor light-emitting element according to claim 1, wherein said plated metal layer has a thickness not less than 10 μ

m but not greater than 30 μ

m.

3. The semiconductor light-emitting element according to claim 1, wherein said high-reflectivity metal layer is an Al layer or an Ag layer.

4. The semiconductor light-emitting element according to claim 1, wherein said N-side bump electrode and said P-type bump electrode have the same plan shape as said under-bump metal layers included in said N-side bump electrode and said P-type bump electrode, respectively.

5. The semiconductor light-emitting element according to claim 1, wherein said under-bump metal layer occupies an area larger than the area occupied by said plated metal layer.

6. The semiconductor light-emitting element according to claim 1, further comprising a protective layer for covering said semiconductor layer, said protective layer having openings formed therein, wherein said N-side bump electrode and said P-type bump electrode are respectively connected electrically to said semiconductor layer at said openings.

7. The semiconductor light-emitting element according to claim 1, wherein said N-side bump electrode is disposed so as to overlap with said light-emitting layer.

8. The semiconductor light-emitting element according to claim 1, wherein said metal layer is a metal layer for preventing atomic diffusion.