System for directly measuring the depth of a high aspect ratio etched feature on a wafer

• US 20110292375A1
• Filed: 06/15/2011
• Published: 12/01/2011
• Est. Priority Date: 06/23/2009
• Status: Active Grant

• Current Assignee: Onto Innovation Inc.
• Original Assignee: Rudolph Technologies Incorporated (Onto Innovation Inc.)
• Inventors: Marx, David S., Grant, David L.
• Granted Patent: US 8,649,016 B2
• Time in Patent Office: Days
• US Class Current: 356/51
• CPC Class Codes: G01B 11/0633 using one or more discrete wavelengths
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: G01B 11/22 for measuring depth
• CPC Class Codes: G01B 2210/56 Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth

Abstract

A system (10) for directly measuring the depth of a high aspect ratio etched feature on a wafer (80) that includes an etched surface (82) and a non-etched surface (84). The system (10) utilizes an infrared reflectometer (12) that in a preferred embodiment includes a swept laser (14), a fiber circulator (16), a photodetector (22) and a combination collimator (18) and an objective lens (20). From the objective lens (20) a focused incident light (23) is produced that is applied to the non-etched surface (84) of the wafer (80). From the wafer (80) is produced a reflected light (25) that is processed through the reflectometer (12) and applied to an ADC (24) where a corresponding digital data signal (29) is produced. The digital data signal (29) is applied to a computer (30) that, in combination with software (32), measures the depth of the etched feature that is then viewed on a display (34).

Claims

1. A system for directly measuring the depth of a high aspect ratio etched feature on a wafer having an etched surface and a non-etched surface, said system comprising:

a) a reflectometer that is positioned to face the non-etched surface of the wafer, wherein said reflectometer having means for producing a focused incident light that is applied to the non-etched surface of the wafer, and means for receiving and processing a reflected light that is also applied from the non-etched surface of the wafer, wherein the output of said reflectometer is an analog spectrum optical frequency signal,

b) an analog-to-digital (ADC) converter that converts the analog spectrum optical frequency signal to a corresponding digital data signal,

c) a computer, that in combination with software, has means for processing the digital data signal applied from said ADC and to display the depth of the high aspect ratio etched surface of the wafer.

2. The system as specified in claim 1 wherein said reflectometer is comprised of an infrared reflectometer having on objective lens that produces a focused spot on the wafer.

3. The system as specified in claim 2 wherein said infrared reflectometer, which functions as a broadband light source, is comprised of

a) a fiber circulator or a beam splitter,

b) a collimator,

c) an objective lens, and

d) a photodetector, wherein the broadband light source is connected to the fiber circulator or the beam splitter, either of which is connected to both the collimator and the photodetector, wherein the collimator interfaces with the objective lens which is positioned above the non-etched surface of the wafer.

4. The system as specified in claim 3 wherein said broadband light source is comprised of a swept laser or a broadband incoherent light source.

5. The system as specified in claim 4 wherein the broadband incoherent light source is selected from the group consisting of an LED, a halogen light source, a mercury arc lamp and a superluminescent diode.

6. The system as specified in claim 3 wherein when the light source is a swept laser a photodetector is utilized, and when the light source is an incoherent light source a spectrometer is utilized.

7. The system as specified in claim 1 wherein said light source produces a set of wavelengths that encompass a range wherein the wafer is transparent.

8. The system as specified in claim 1 wherein said software, when applied the digital data signal, performs the following operations:

a) a Fourier transform,

b) find peak amplitude, and

c) calculate thickness.

9. The system as specified in claim 3 further comprising a wafer holding fixture having an opening that is larger than the etched surface of the wafer, means for being laterally displaced;

and a means for positioning the non-etched surface facing the infrared reflectometer.

10. A system for directly measuring the depth of a high aspect ratio etched feature on a wafer having an etched surface and a non-etched surface, said system comprising;

a) an infrared reflectrometer comprising;

(1) a swept laser having means for producing a wavelength that is swept in time across a range of wavelengths, a trigger signal and a clock signal,

(2) a fiber circulator having a first input that is applied the wavelengths from said swept laser, a second input, a first light output and a second light output,

(3) a collimator that is applied the second light output from said fiber circulator and that produces a collimated light output that is applied to the second input on said fiber circulator,

(4) an objective lens that interfaces with the collimator and that is positioned to face the non-etched surface of the wafer, wherein from the lens is emitted a focused incident light that is applied to the non-etched surface of the wafer, wherefrom the wafer is emitted a reflected light that is applied to said objective lens,

(5) a photodetector that is applied the first light output from said fiber circulator and that produces an analog spectrum optical frequency signal,

b) an analog to digital converter (ADC) that functions as a data acquisition device, said ADC having a first input and a second input that are applied respectively the trigger signal and the clock signal from the swept laser, wherein said ADC further having a third input that is applied the analog spectrum optical frequency signal that is applied from the photodetector, wherein said ADC produces a corresponding digital data signal,

c) a computer, in combination with software, having means for processing the digital data signal applied from the ADC and to produce a display signal that portrays on a display the depth of the high aspect ratio etched feature on the wafer, and

d) a wafer holding fixture having means for being laterally displaced and means for positioning the non-etched surface of the wafer facing the objective lens on said infrared reflectometer.

11. The system as specified in claim 10 wherein said wafer is selected from the group consisting of Si, GaAs, GaAlAs, InP, SiC, SiO₂ and sapphire.

12. The system as specified in claim 10 wherein said reflectometer utilizes a small spot size to illuminate the non-etched surface of said wafer.

13. The system as specified in claim 10 wherein the swept wavelengths range from 1260 nm to 1360 nm which encompasses a range wherein the wafer is transparent.

14. The system as specified in claim 10 wherein said software, when applied the digital data signal, performs the following operations:

a) a Fourier transform,

b) find peak amplitude, and

c) calculate thickness.

15. A system for directly measuring the depth of a high aspect ratio etched feature on a wafer having an etched surface and a non-etched surface, said system comprising:

a) a broadband incoherent infrared source (BIIS) having means for producing an incoherent light source,

b) a fiber circulator having a first input that is applied the incoherent light signal from said BIIS, a second input, a first light output and a second light output,

c) a collimator that is applied the second light output from said fiber circulator and that produces a collimated light output that is applied to the second input on said fiber circulator,

d) an objective lens that interfaces with the collimator and that is positioned to face the non-etched surface of the wafer, wherein from the lens is emitted a focused incident light that is applied to the non-etched surface of the wafer, wherefrom the wafer is emitted a reflected light that is applied to said objective lens,

e) a spectrometer that is applied the light signal from said fiber circulator and that produces a light distribution signal,

f) a computer, in combination with software, having means for processing the light distribution signal applied from said spectrometer and to produce a digital data signal that portrays on a display the depth of the high aspect ratio etched feature on the wafer, and

g) a wafer holding fixture having means for being laterally displaced and means for positioning the non-etched surface of the wafer facing the objective lens.

16. The system as specified in claim 15 wherein said spectrometer can consist of either a grating spectrometer or a Fourier transform infrared spectrometer (FTIR).

17. A first method for measuring the depth of a high aspect ratio etched feature on a wafer having an etched surface and a non-etched surface, said first method comprising the following steps:

a) position a reflectometer facing the non-etched surface of the wafer,

b) measure the thickness of the wafer at a location where it is not etched,

c) measure the thickness of the wafer at a location where it is etched, and

d) subtract the two measurements to determine the depth of the etched feature.

18. The method as specified in claim 17 wherein in said first method is comprised of a sequential scanning method.

19. A second method for measuring the depth of a high aspect ratio etched feature on a wafer having an etched surface and a non-etched surface, said second method comprising the following steps:

a) position a reflectometer facing the non-etched surface of the Wafer,

b) simultaneously illuminate both the etched feature and the etched surface adjacent to the etched feature,

c) measure the interference between the reflections from the etched surface and the etched feature, and

d) calculate the depth of the etched feature.

20. The method as specified in claim 19 wherein said second method is comprised of a direct method.