HIGH DENSITY CAPACITOR

• US 20110292574A1
• Filed: 05/31/2011
• Published: 12/01/2011
• Est. Priority Date: 06/01/2010
• Status: Active Grant

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: NXP B.V. (NXP Semiconductors NV)
• Inventors: Besling, Wim, Reimann, Klaus
• Granted Patent: US 8,830,656 B2
• Time in Patent Office: Days
• US Class Current: 361/528
• CPC Class Codes: H01G 11/02 using combined reduction-oxidation reactions, e.g. redox arrangement or solion
• CPC Class Codes: H01G 11/06 with one of the electrodes allowing ions to be reversibly doped thereinto, e.g. lithium ion capacitors [LIC]
• CPC Class Codes: H01G 11/46 Metal oxides
• CPC Class Codes: H01G 11/50 specially adapted for lithium-ion capacitors, e.g. for lithium-doping or for intercalation
• CPC Class Codes: H01G 11/56 Solid electrolytes, e.g. gels; Additives therein
• CPC Class Codes: H01G 9/042 characterised by the material H01G11/22 takes precedence
• CPC Class Codes: H01G 9/28 Structural combinations of electrolytic capacitors, rectifiers, detectors, switching devices with other electric components not covered by this subclass
• CPC Class Codes: H01M 10/0525 Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
• CPC Class Codes: Y02E 60/10 Energy storage using batteries
• CPC Class Codes: Y02E 60/13 Energy storage using capacitors
• CPC Class Codes: Y10T 29/43 Electric condenser making

Abstract

A high density capacitor 12, a method of manufacturing it, and applications of it are described. The capacitor 12 is an electrochemical capacitor using a metal ion accepting cathode 22 and a metal ion accepting anode 26 and a amorphous solid electrolyte 24 between. The cathode and anode may be of amorphous lithium ion intercalating material such as suitable transition metal oxides with multiple oxidation states.

Claims

1. An electrochemical capacitor, comprising:

a cathode;

an anode;

and an electrolyte allowing migration of metal ions between the anode and the cathode;

wherein the electrolyte is a solid state electrolyte; and

at least one of the anode and the cathode has multiple, non discrete oxidation states having a broad, continuous distribution of redox potentials.

2. An electrochemical capacitor according to claim 1, wherein the thickness of the amorphous solid state electrolyte is 100 to 600 nm.

3. An electrochemical capacitor according to claim 2, wherein at least one of the anode and cathode is formed of a compound of a transition metal with multiple oxidation states.

4. An electrochemical capacitor according to claim 3 wherein the compound of a transition metal with multiple oxidation states is a non-crystalline material, an amorphous material, and/or a material with a defective structure.

5. An electrochemical capacitor according claim 3 wherein the compound of a transition metal with multiple oxidation states is a Li- or Li ion intercalating material.

6. An electrochemical capacitor according to claim 5, wherein the cathode is an amorphous transition metal oxide, a lithium transition metal oxide or an amorphous lithium transition metal phosphate doped with at least one other transition metal, the metals being nickel, cobalt, iron, manganese, chromium, vanadium, molybdenum, tungsten.

7. An electrochemical capacitor according to claim 1, wherein the anode is an amorphous transition metal oxide, lithium transition metal oxide, or an amorphous lithium transition metal phosphate doped with at least one other transition metal, the metals being nickel, cobalt, iron, manganese, chromium, vanadium, molybdenum, tungsten. or a copper or bismuth layer on which metallic lithium is deposited during charging.

8. An electrochemical capacitor according to claim 1 wherein the amorphous solid state electrolyte is lithium titanate, lithium tantalate, lithium niobate, lithium phosphorous oxide, or lithium phosphorous oxynitride.

9. A device, comprising an electrochemical capacitor according to claim 1 and a dielectric capacitor formed on a common substrate, wherein the dielectric capacitor comprises a lower electrode , an upper electrode and a dielectric layer between the upper and lower electrodes.

10. A solid state electrochemical capacitor arrangement, comprising:

a substrate;

a plurality of semiconductor components; and

at least one solid state electrochemical capacitor including;

a cathode;

an anode;

and an electrolyte allowing migration of metal ions between the anode and the cathode;

wherein the electrolyte is a solid state electrolyte; and

at least one of the anode and the cathode has multiple, non discrete oxidation states having a broad, continuous distribution of redox potentials.

11. A solid state electrochemical capacitor arrangement according to claim 10, wherein the thickness of the amorphous solid state electrolyte is 100 to 1000 nm.

12. A solid state electrochemical capacitor arrangement according to claim 10, wherein the plurality of semiconductor components make up an electronic circuit comprising at least one filter module for filtering out undesired frequencies and/or suppressing voltage ripples, wherein at least one solid state electrochemical capacitor is connected to each filter module.

13. A method of manufacturing an electrochemical capacitor comprising, in this order, the steps of:

depositing a diffusion barrier layer on a substrate;

depositing a cathode;

depositing an anode;

and depositing an electrolyte allowing migration of metal ions between the anode and the cathode;

wherein the electrolyte is a solid state electrolyte for transporting metal ions; and

at least one of the anode and cathode is a layer of material having multiple multiple, non discrete oxidation states having a broad, continuous distribution of redox potentials.

14. A method according to claim 13, wherein the thickness of the solid state electrolyte is 100 to 600 nm.

15. A method according to claim 13 wherein both the anode and the cathode are of Li or Li ion intercalating material.

16. A method according to claim 13, further comprising forming a plurality of semiconductor devices on the substrate before the step of depositing a diffusion barrier layer wherein the temperature does not rise above 450°

C. after the step of forming a plurality of complementary metal oxide semiconductor devices on the substrate.

17. A method, comprising forming an electrochemical capacitor using a method according to claim 13,

the method further comprising forming a dielectric capacitor on the same substrate as the electochemical capacitor,

wherein the dielectric capacitor comprises a lower electrode , an upper electrode and a dielectric layer between the upper and lower electrodes.