SEMICONDUCTOR-DEVICE COOLING STRUCTURE AND POWER CONVERTER

• US 20110292611A1
• Filed: 08/09/2011
• Published: 12/01/2011
• Est. Priority Date: 02/09/2009
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Yaskawa Denki
• Original Assignee: Kabushiki Kaisha Yaskawa Denki
• Inventors: Sasaki, Akira, Kawanami, Yasuhiko, HIGUCHI, Masato
• Application Number:
  US13/206,487
• Publication Number:
  US 20110292611A1
• Time in Patent Office: Days
• US Class Current: 361/717
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/3677 Wire-like or pin-like cooling fins or heat sinks
• CPC Class Codes: H01L 23/473 by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 25/115 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A power converter includes a plurality of semiconductor modules each including a semiconductor device that generates heat and a cooler that includes a first cooling element, on which the semiconductor device is directly mounted through a connecting member, and a second cooling element having a higher heat capacity than the first cooling element, and an insulating casing receiving the semiconductor modules to electrically isolate the semiconductor devices from each other.

Claims

1. A semiconductor-device cooling structure comprising:

a semiconductor device that generates heat; and

a cooler that includes a first cooling element on which the semiconductor device is directly mounted through a connecting member and a second cooling element, the first cooling element having a first heat capacity, the second cooling element having a second heat capacity higher than the first heat capacity.

2. The structure according to claim 1, wherein an electrode electrically connected to an internal circuit included in the semiconductor device is exposed on the principal surface of the semiconductor device and the electrode is joined to the first cooling element with the connecting member.

3. The structure according to claim 2, wherein the connecting member is free of insulating material.

4. The structure according to claim 1, wherein the first cooling element is integrated with the second cooling element through a first engaging member included in the first cooling element and a second engaging member included in the second cooling element.

5. The structure according to claim 4, wherein the second engaging member is a protrusion protruding from the second cooling element and the first engaging member is a recess receiving the protrusion.

6. The structure according to claim 4, wherein a heat conductive member is disposed between the first and second cooling elements.

7. The structure according to claim 6, wherein the surfaces of the integrated first and second cooling elements are covered with an electrically insulating film.

8. A power converter comprising:

a plurality of semiconductor modules each including a semiconductor device that generates heat and a cooler that includes a first cooling element, on which the semiconductor device is directly mounted through a connecting layer, and a second cooling element having a higher heat capacity than the first cooling element; and

an insulating casing that receives the semiconductor modules to electrically isolate the semiconductor modules from each other.

9. The power converter according to claim 8, further comprising:

a housing that receives the insulating casing.

10. A power converter comprising:

a plurality of cooling elements;

a plurality of semiconductor devices each of which is mounted on the corresponding cooling element through a connecting layer; and

an insulating layer disposed between the adjacent cooling elements.

11. The power converter according to claim 10, wherein each cooling element has a liquid cooling hole to which a cooling medium is supplied.

12. The power converter according to claim 11, further comprising:

a metal layer disposed between each cooling element and the corresponding semiconductor device.