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STRUCTURES AND METHODS FOR A FIELD-RESET SPIN-TORQUE MRAM

  • US 20110292714A1
  • Filed: 05/28/2010
  • Published: 12/01/2011
  • Est. Priority Date: 05/28/2010
  • Status: Active Grant
First Claim
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1. A method of operating a spin-torque magnetoresistive memory including a bit line coupled to each of a plurality of magnetoresistive memory elements, circuitry coupled to the bit line, and a metal reset line positioned near the plurality of magnetoresistive memory elements, the method comprising:

  • setting the plurality of magnetoresistive memory elements to a first state by applying a reset current through the metal reset line to apply a magnetic field to each of the plurality of magnetoresistive memory elements; and

    programming selected ones of the plurality of magnetoresistive memory elements to a second state by applying a spin torque transfer current through the selected magnetoresistive memory elements from the circuitry to the bit line.

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