PATTERNING METHOD

• US 20110294075A1
• Filed: 05/25/2010
• Published: 12/01/2011
• Est. Priority Date: 05/25/2010
• Status: Abandoned Application

• Current Assignee: United Microelectronics Corporation
• Original Assignee: United Microelectronics Corporation
• Inventors: Liao, Jiunn-Hsiung, Chen, Shin-Chi
• Application Number:
  US12/786,794
• Publication Number:
  US 20110294075A1
• Time in Patent Office: Days
• US Class Current: 430/323
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

Abstract

A patterning method of the present invention is described as follows. A mask layer and a patterned photoresist layer are formed on a target layer in sequence, wherein an etching rate of the mask layer is different from an etching rate of the target layer. A plurality of spacers is formed on sidewalls of the patterned photoresist layer respectively, wherein an etching rate of the spacers is different from the etching rate of the mask layer. The patterned photoresist layer is removed to form an opening between any two adjacent spacers. A portion of the mask layer is removed by using the spacers as a mask so as to form a patterned mask layer. A portion of the target layer is removed by using the patterned mask layer as a mask.

Claims

1. A patterning method, comprising:

forming a mask layer and a patterned photoresist layer on a target layer in sequence, wherein an etching rate of the mask layer is different from an etching rate of the target layer;

forming a plurality of spacers on sidewalls of the patterned photoresist layer respectively, wherein an etching rate of the spacers is different from the etching rate of the mask layer;

removing the patterned photoresist layer to form an opening between any two adjacent spacers;

removing a portion of the mask layer by using the spacers as a mask so as to form a patterned mask layer; and

removing a portion of the target layer by using the patterned mask layer as a mask.

2. The patterning method according to claim 1, further comprising forming a stop layer between the patterned photoresist layer and the mask layer.

3. The patterning method according to claim 2, wherein the stop layer comprises a dielectric layer or a silicon-containing hard-mask bottom anti-reflection coating (SHB) layer.

4. The patterning method according to claim 1, wherein the mask layer comprises a carbon-containing material layer or a photoresist layer.

5. The patterning method according to claim 1, wherein the spacers comprise a low-temperature dielectric material.

6. The patterning method according to claim 1, further comprising removing the spacers.

7. The patterning method according to claim 1, wherein the method for forming the spacers comprises:

forming a spacer material layer conformally on the patterned photoresist layer; and

performing an anisotropic etching process to remove a portion of the spacer material layer.

8. A patterning method, comprising:

forming a mask layer and a patterned photoresist layer on a target layer in sequence, wherein the mask layer comprises a carbon-containing material layer or a photoresist layer;

forming a plurality of spacers on sidewalls of the patterned photoresist layer respectively;

removing the patterned photoresist layer to form an opening between any two adjacent spacers;

removing a portion of the mask layer by using the spacers as a mask so as to form a patterned mask layer; and

removing a portion of the target layer by using the patterned mask layer as a mask.

9. The patterning method according to claim 8, further comprising forming a stop layer between the patterned photoresist layer and the mask layer.

10. The patterning method according to claim 9, wherein the stop layer comprises a dielectric layer when the mask layer comprises the carbon-containing material layer.

11. The patterning method according to claim 10, wherein the dielectric layer comprises silicon oxide or silicon nitride.

12. The patterning method according to claim 9, wherein the stop layer comprises a silicon-containing hard-mask bottom anti-reflection coating (SHB) layer when the mask layer comprises the photoresist layer.

13. The patterning method according to claim 8, wherein the spacers comprise a low-temperature dielectric material.

14. The patterning method according to claim 8, further comprising removing the spacers.

15. The patterning method according to claim 8, wherein the method for forming the spacers comprises:

forming a spacer material layer conformally on the patterned photoresist layer; and

performing an anisotropic etching process to remove a portion of the spacer material layer.