METHOD OF FABRICATING METAL INTERCONNECTION AND METHOD OF FABRICATING IMAGE SENSOR USING THE SAME

• US 20110294288A1
• Filed: 08/10/2011
• Published: 12/01/2011
• Est. Priority Date: 11/26/2007
• Status: Active Grant

• Current Assignee: An-Chul Shin, Jeong-Ho Lee, Jun-Seok Yang, Min-Young Jung, Sang-Il Jung, Young-Hoon Park
• Original Assignee: An-Chul Shin, Jeong-Ho Lee, Jun-Seok Yang, Min-Young Jung, Sang-Il Jung, Young-Hoon Park
• Inventors: LEE, Jeong-Ho, Park, Young-Hoon, Jung, Min-Young, Jung, Sang-Il, Shin, An-Chul, Yang, Jun-Seok
• Granted Patent: US 8,338,295 B2
• Time in Patent Office: Days
• US Class Current: 438/618
• CPC Class Codes: H01L 21/76814 post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826
• CPC Class Codes: H01L 21/76838 characterised by the formation and the after-treatment of the conductors etching for patterning the conductors H01L21/3213
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14687 Wafer level processing

Abstract

A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.

Claims

1. A method of fabricating a metal interconnection, comprising:

forming an interlayer dielectric layer on a substrate;

forming a interconnection metal layer on the interlayer dielectric layer;

patterning the interconnection metal layer to form a metal interconnection on the interlayer dielectric layer; and

performing an ultraviolet (UV) treatment on the substrate after the metal interconnection is formed.

2. The method of claim 1, wherein the UV treatment is performed multiple times.

3. The method of claim 1, wherein the UV treatment is performed at a temperature between about 50°

C. to about 200°

C. for about 10 seconds to about 300 seconds.

4. The method of claim 1, wherein the interconnection metal layer is patterned by plasma etching.

5. The method of claim 1, wherein the metal interconnection is an aluminum interconnection.