METHOD FOR MAKING THREE-DIMENSIONAL NANO-STRUCTURE ARRAY

• US 20110294295A1
• Filed: 12/16/2010
• Published: 12/01/2011
• Est. Priority Date: 05/27/2010
• Status: Active Grant

• Current Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Original Assignee: Hon Hai Precision Industry Co., Ltd., Tsinghua University
• Inventors: FAN, SHOU-SHAN, LI, QUN-QING, ZHU, ZHEN-DONG
• Granted Patent: US 8,501,020 B2
• Time in Patent Office: Days
• US Class Current: 438/694
• CPC Class Codes: B81C 1/00031 Regular or irregular arrays of nanoscale structures, e.g. etch mask layer photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002

Abstract

A method for making a three-dimensional nano-structure array includes following steps. First, a substrate is provided. Next, a mask is formed on the substrate. The mask is a monolayer nanosphere array or a film defining a number of holes arranged in an array. The mask is then tailored and simultaneously the substrate is etched by the mask. Lastly, the mask is removed.

Claims

1. A method for making a three-dimensional nano-structure array, the method comprising:

providing a substrate;

forming a mask on a surface of the substrate, wherein the mask is a monolayer nanosphere array or a film defining a plurality of holes arranged in an array;

simultaneously tailoring the mask and etching the substrate by the mask; and

removing the mask.

2. The method of claim 1, wherein the monolayer nanosphere array is formed by:

preparing a nanosphere solution;

forming a monolayer nanosphere solution on the substrate; and

drying the monolayer nanosphere solution.

3. The method of claim 2, wherein the step of forming the monolayer nanosphere solution on the substrate comprises:

diluting the nanosphere solution;

inserting the substrate into the diluted nanosphere solution; and

drawing the substrate out of the diluted nanosphere solution.

4. The method of claim 3, wherein an angle between the surface of the substrate and a level of the nanosphere solution is in a range from about 5 degrees to about 15 degrees.

5. The method of claim 3, wherein a speed of the inserting and drawing the substrate is in a range from about 3 millimeters per hour to about 10 millimeters per hour.

6. The method of claim 2, wherein the step of forming a monolayer nanosphere solution on the substrate comprises:

diluting the nanosphere solution to form a diluted nanosphere solution;

dripping the diluted nanosphere solution on the surface of the substrate;

spinning the substrate at a speed from about 400 revolutions per minute to about 500 revolutions per minute for about 5 seconds to about 30 seconds;

increasing a spinning speed of the substrate to a range from about 800 revolutions per minute to about 1000 revolutions per minute for about 30 seconds to about 2 minutes; and

increasing the spinning speed of the substrate to a range from about 1400 revolutions per minute to about 1500 revolutions per minute for about 10 seconds to about 20 seconds.

7. The method of claim 2, wherein the monolayer nanosphere array is hexagonally close-packed, squarely close-packed, or concentrically close-packed.

8. The method of claim 2, wherein a step of hydrophilicly treating the substrate is performed before the step of forming a monolayer nanosphere solution on the substrate.

9. The method of claim 1, wherein the step of tailoring and etching is performed in a reactive atmosphere produced by a microwave plasma system.

10. The method of claim 9, wherein the reactive atmosphere consists of chlorine gas, argon gas, and oxygen gas.

11. The method of claim 10, wherein an input rate of the chlorine gas is in a range from about 10 standard cubic centimeters per minute to about 60 standard cubic centimeters per minute, an input rate of the argon gas is in a range from about 4 standard cubic centimeters per minute to about 20 standard cubic centimeters per minute, and an input rate of the oxygen gas is in a range from about 4 standard cubic centimeters per minute to about 20 standard cubic centimeters per minute.

12. The method of claim 9, wherein a power of the plasma system is in a range from about 40 Watts to about 70 Watts.

13. The method of claim 9, wherein a working pressure of the reactive atmosphere is in a range from about 2 Pa to about 10 Pa.

14. The method of claim 9, wherein a tailoring and etching time in the reactive atmosphere is in a range from about 1 minute to about 2.5 minutes.

15. The method of claim 9, wherein a ratio between a power of the plasma system and a working pressure of the reactive atmosphere is less than 20:

1.

16. The method of claim 1, wherein the mask is removed by being dissolved in a stripping agent selected from the group consisting of tetrahydrofuran, acetone, butanone, cyclohexane, hexane, methanol, and ethanol.

17. The method of claim 1, wherein the film is made of polymer and formed by nano-imprint or template deposition.

18. A method for making a three-dimensional nano-structure array, the method comprising:

providing a substrate;

hydrophilicly treating the substrate;

forming a monolayer nanosphere array on the substrate, wherein the monolayer nanosphere array comprises a plurality of nanospheres;

placing the substrate with the monolayer nanosphere array thereon in a reactive atmosphere; and

removing the monolayer nanosphere array.

19. The method of claim 18, wherein the reactive atmosphere simultaneously tailors the monolayer nanosphere array and etches the substrate using the monolayer nanosphere array as a mask.

20. The method of claim 19, wherein the plurality of nanospheres becomes smaller and a gap between two adjacent nanospheres becomes greater so that more of a portion of the substrate is etched during the step of tailoring and etching.