MINIATURIZED PIEZOELECTRIC ACCELEROMETERS

• US 20110296918A1
• Filed: 09/04/2009
• Published: 12/08/2011
• Est. Priority Date: 02/17/2009
• Status: Active Grant

• Current Assignee: Agency For Science Technology and Research
• Original Assignee: Agency For Science Technology and Research
• Inventors: Yao, Kui, Shanmugavel, Saravanan, Luong, Trung, Dhaliwal, Ajit S., NG, Hon Yu Peter
• Granted Patent: US 8,833,165 B2
• Time in Patent Office: Days
• US Class Current: 73/514.34
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/0922 of the bending or flexing mode type
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/084 the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass

Abstract

The miniaturized piezoelectric accelerometer includes a support frame (102) having a cavity (104) and a seismic mass (108) supported by a plurality of suspension beams (110) extending from the support frame (102). Each of the suspension beams (110) has a piezoelectric thin film coated on a top surface thereof, with a pair of inter-digital electrodes (114) deposited on an upper surface of each piezoelectric thin film. The presence of acceleration excites bending and thus strain in the piezoelectric thin film, which in turn causes electrical signals to be generated over terminals of the electrodes (114). To collect constructively the output of the electrodes (114), one terminal of each of the electrodes (114) is routed to and electrically connected at a top surface (308) of the seismic mass (108).

Claims

1. A miniaturized piezoelectric accelerometer comprising:

a support frame having a cavity therein, the cavity having a central longitudinal axis,

a seismic mass in the cavity and having a central longitudinal axis, the central longitudinal axis of the cavity and the central longitudinal axis of the seismic mass being co-incident,

a plurality of suspension beams extending from the support frame to the seismic mass, each of the suspension beams having a piezoelectric thin film coated on a top surface thereof,

a pair of inter-digital electrodes deposited on an upper surface of each piezoelectric thin film, and

at least one terminal of each of the inter-digital electrodes being routed to and electrically connected at a top surface of the seismic mass.

2. The miniaturized piezoelectric accelerometer of claim 1, wherein the cavity has a base and the seismic mass has a bottom, the bottom being spaced from the base.

3. The miniaturized piezoelectric accelerometer of claim 1, wherein the piezoelectric thin film has an electric polarization that is approximately aligned with a plane of the top surface of the suspension beams.

4. The miniaturized piezoelectric accelerometer of claim 1, wherein the electrical connection of the at least one terminal of each of the inter-digital electrodes is at the central longitudinal axis of the seismic mass.

5. The miniaturized piezoelectric accelerometer of claim 1, wherein the pairs of inter-digital electrodes are electrically connected in parallel.

6. The miniaturized piezoelectric accelerometer of claim 1, wherein the inter-digital electrodes are disposed at a location selected from the group consisting of:

adjacent the seismic mass and adjacent the support frame.

7. The miniaturized piezoelectric accelerometer of claim 1, wherein the cavity of the support frame has a regular polygon shape.

8. The miniaturized piezoelectric accelerometer of claim 7, wherein the regular polygon shape is defined by polygon sides, and wherein each of the plurality of suspension beams extends orthogonally from a centre of each polygon side.

9. The miniaturized piezoelectric accelerometer of claim 8, wherein each of the plurality of suspension beams is substantially rectangular.

10. The miniaturized piezoelectric accelerometer of claim 7, wherein the regular polygon shape is a square, and wherein the plurality of suspension beams comprises four suspension beams.

11. The miniaturized piezoelectric accelerometer of claim 7, wherein the regular polygon shape is an octagon, and wherein the plurality of suspension beams comprises eight suspension beams.

12. The miniaturized piezoelectric accelerometer of claim 1, wherein the seismic mass is cylindrical.

13. The miniaturized piezoelectric accelerometer of claim 7, wherein the seismic mass has a regular polygon shape with polygon sides that are parallel with polygon sides of the cavity.

14. The miniaturized piezoelectric accelerometer of claim 1, wherein the support frame, the plurality of suspension beams and the seismic mass are made of a monolithic substrate material.

15. The miniaturized piezoelectric accelerometer of claim 1, wherein each of the plurality of suspension beams comprises multiple layers, including Si, SiO₂, SiN_x, YSZ, and ferroelectric PLZT.

16. A method of fabricating miniaturized piezoelectric accelerometers comprising:

depositing a piezoelectric thin film and an electrode layer on a front side of a wafer,

patterning the electrode layer to produce inter-digital electrodes and electrical connections for the inter-digital electrodes, with at least one terminal of the inter-digital electrodes being routed to and electrically connected at a top surface of a part of the wafer that defines or that will define a seismic mass of the accelerometer,

etching the piezoelectric thin film and the wafer from the front side to form a plurality of suspension beams extending from a support frame of the accelerometer, and

etching from a back side of the wafer to form a cavity of the support frame and the seismic mass.

17. The method of claim 16, wherein the wafer is a single crystal silicon wafer and wherein the etching from the back side of the wafer is carried out to space a bottom of the seismic mass from a base of the cavity.

18. The method of claim 16, wherein the wafer is an SOI wafer comprising a thin Si layer, a SiO₂ layer, and a bulk Si layer, with the thickness of the suspension beams being determined by the thickness of the thin Si layer and the SiO₂ layer.

19. The method of claim 16, further comprising etching to form dicing lines comprising:

forming trenches at the front side of the wafer around individual accelerometers with a depth corresponding to the desired thickness of the suspension beams, except at fixed locations, and

forming corresponding trenches at the back side of the wafer until the trenches at the front side and the back side are connected, leaving the individual accelerometers joined to each other only at the fixed locations.

20. The method of claim 19, further comprising separating the individual accelerometers by applying a small force near the fixed locations, the fixed locations being near corners of the support frame of each accelerometer.