MAGNETIC MEMORY ELEMENT AND MAGNETIC MEMORY

• US 20110297909A1
• Filed: 01/28/2010
• Published: 12/08/2011
• Est. Priority Date: 01/30/2009
• Status: Active Grant

• Current Assignee: NEC Corporation
• Original Assignee: NEC Corporation
• Inventors: Fukami, Shunsuke, Suzuki, Tetsuhiro, Nagahara, Kiyokazu, Ishiwata, Nobuyuki, Ohshima, Norikazu
• Granted Patent: US 8,994,130 B2
• Time in Patent Office: Days
• US Class Current: 257/1
• CPC Class Codes: G11C 11/16 using elements in which the storage effect is based on magnetic spin effect
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: G11C 11/1655 Bit-line or column circuits
• CPC Class Codes: G11C 11/1659 Cell access
• CPC Class Codes: G11C 11/1673 Reading or sensing circuits or methods
• CPC Class Codes: G11C 11/1675 Writing or programming circuits or methods
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A magnetic memory element includes: a first magnetization free layer formed of a ferromagnetic material having perpendicular magnetic anisotropy; a second magnetization free layer provided near the first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy; a reference layer formed of a ferromagnetic material having in-plane magnetic anisotropy; and a non-magnetic layer provided between the second magnetization free layer and the reference layer. The first magnetization free layer includes: a first magnetization fixed region of which magnetization is fixed, a second magnetization fixed region of which magnetization is fixed, and a magnetization free region which is connected to the first magnetization fixed region and the second magnetization fixed region, and of which magnetization can be switched. The second magnetization free layer is included in the first magnetization free layer in a plane parallel to a substrate. The second magnetization free layer is provided in a first direction away from the magnetization free region in the plane.

Claims

1. A magnetic memory element comprising:

a first magnetization free layer configured to be formed of a ferromagnetic material having perpendicular magnetic anisotropy;

a second magnetization free layer configured to be provided near said first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy;

a reference layer configured to be formed of a ferromagnetic material having in-plane magnetic anisotropy; and

a non-magnetic layer configured to be provided between said second magnetization free layer and said reference layer,

wherein said first magnetization free layer includes;

a first magnetization fixed region of which magnetization is fixed,

a second magnetization fixed region of which magnetization is fixed, and

a magnetization free region which is connected to said first magnetization fixed region and said second magnetization fixed region, and of which magnetization can be switched,

wherein said second magnetization free layer is included in said first magnetization free layer in a plane parallel to a substrate, and

wherein said second magnetization free layer is provided in a first direction away from said magnetization free region in said plane.

2. The magnetic memory element according to claim 1, wherein said reference layer has magnetization fixed in a direction approximately parallel to said first direction.

3. The magnetic memory element according to claim 1, wherein said second magnetization free layer is included in one of said first magnetization fixed region and said second magnetization fixed region in said plane.

4. The magnetic memory element according to claim 3, wherein said first magnetization fixed region, said magnetization free region and said second magnetization fixed region are arranged linearly in this order, and

wherein said first magnetization free layer has a rectangle shape with an aspect ratio of approximately three.

5. The magnetic memory element according to claim 3, further comprising:

a magnetization fixed layer group configured to be magnetically coupled with said first magnetization free layer.

6. The magnetic memory element according to claim 3, further comprising:

a conductive layer configured to be electrically connected to said first magnetization free layer and one of said second magnetization free layer and said reference layer.

7. The magnetic memory element according to claim 5, wherein said second magnetization free layer and said magnetization fixed layer group are arranged in places opposite to each other with respect said first magnetization free layer.

8. The magnetic memory element according to claim 5, wherein said second magnetization free layer and said magnetization fixed layer group are arranged in the same side with respect said first magnetization free layer.

9. A magnetic memory comprising:

a plurality of magnetic memory cells configured to be arranged in a matrix shape, each of plurality of magnetic memory cells including a magnetic memory element,

wherein said magnetic memory element comprising;

a first magnetization free layer configured to be formed of a ferromagnetic material having perpendicular magnetic anisotropy;

a second magnetization free layer configured to be provided near said first magnetization free layer and formed of a ferromagnetic material having in-plane magnetic anisotropy;

a reference layer configured to be formed of a ferromagnetic material having in-plane magnetic anisotropy; and

a non-magnetic layer configured to be provided between said second magnetization free layer and said reference layer.

wherein said first magnetization free layer includes;

a first magnetization fixed region of which magnetization is fixed,

a second magnetization fixed region of which magnetization is fixed, and

a magnetization free region which is connected to said first magnetization fixed region and said second magnetization fixed region, and of which magnetization can be switched,

wherein said second magnetization free layer is included in said first magnetization free layer in a plane parallel to a substrate, and

wherein said second magnetization free layer is provided in a first direction away from said magnetization free region in said plane.

10. The magnetic memory according to claim 9, wherein said reference layer has magnetization fixed in a direction approximately parallel to said first direction.

11. The magnetic memory according to claim 9, wherein said second magnetization free layer is included in one of said first magnetization fixed region and said second magnetization fixed region in said plane.

12. The magnetic memory according to claim 11, wherein said first magnetization fixed region, said magnetization free region and said second magnetization fixed region are arranged linearly in this order, and

wherein said first magnetization free layer has a rectangle shape with an aspect ratio of approximately three.

13. The magnetic memory according to claim 11, wherein said magnetic memory element further includes:

a magnetization fixed layer group configured to be magnetically coupled with said first magnetization free layer.

14. The magnetic memory according to claim 11, wherein said magnetic memory element further includes:

a conductive layer configured to be electrically connected to said first magnetization free layer and one of said second magnetization free layer and said reference layer.

15. The magnetic memory according to claim 13, wherein said second magnetization free layer and said magnetization fixed layer group are arranged in places opposite to each other with respect said first magnetization free layer.

16. The magnetic memory according to claim 13, wherein said second magnetization free layer and said magnetization fixed layer group are arranged in the same side with respect said first magnetization free layer.