LIGHT-EMITTING DIODE, METHOD FOR MANUFACTURING THE SAME, AND LIGHT-EMITTING DIODE LAMP

• US 20110297978A1
• Filed: 01/21/2010
• Published: 12/08/2011
• Est. Priority Date: 02/20/2009
• Status: Active Application

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Showa Denko KK
• Inventors: Takeuchi, Ryouichi, Muraki, Noritaka
• Application Number:
  US13/202,274
• Publication Number:
  US 20110297978A1
• Time in Patent Office: Days
• US Class Current: 257/89
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48 of an individual wire connector
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

The invention provides a high luminance light-emitting diode capable of reducing the loss of light emitted from LED chips in a package and also capable of improving the light extraction efficiency from the package, wherein

the light-emitting diode (1) includes a compound semiconductor layer (2) including a light-emitting portion (8) having a light-emitting layer (9) and a substrate (3), in which an external reflection layer (4) having a reflectivity higher than that of the substrate (3) is provided on a side surface of the substrate (3).

Claims

1. A light-emitting diode, comprising a compound semiconductor layer which includes a light-emitting portion having a light-emitting layer and a substrate,

wherein an external reflection layer having a reflectivity higher than that of the substrate is provided on a side surface of the substrate.

2. The light-emitting diode according to claim 1,

wherein the compound semiconductor layer and the substrate are joined;

and

the substrate is any of Si, Ge, a metal, a ceramic, and GaP.

3. The light-emitting diode according to claim 1,

wherein the external reflection layer has a reflectivity of 90% or higher in the wavelength band of external light.

4. The light-emitting diode according to claim 1,

wherein the external reflection layer is constituted by a metal including at least one of silver, gold, copper, and aluminum.

5. The light-emitting diode according to claim 1,

wherein a stabilization layer is provided on the surface of the external reflection layer.

6. The light-emitting diode according to claim 1,

wherein an internal reflection layer is provided between the compound semiconductor layer and the substrate.

7. The light-emitting diode according to claim 1,

wherein the external reflection layer is formed by a plating method.

8. The light-emitting diode according to claim 1,

wherein the light-emitting layer includes an AlGaInP or AlGaAs layer.

11. A light-emitting diode lamp in which two or more light-emitting diodes are mounted,

wherein at least one light-emitting diode according to claim 1 is mounted.

12. The light-emitting diode lamp according to claim 11,

wherein light emission wavelengths of the mounted light-emitting diodes are different.

13. The light-emitting diode lamp according to claim 11,

wherein the chip heights of the mounted light-emitting diodes are different.

9. A method for manufacturing a light-emitting diode, comprising:

a process in which a compound semiconductor layer including a light-emitting portion having a light-emitting layer is formed on a semiconductor substrate;

a process in which the compound semiconductor layer and the substrate are joined;

a process in which the semiconductor substrate is removed; and

a process in which an external reflection layer is formed on a side surface of the substrate.

10. The method for manufacturing a light-emitting diode according to claim 9,

wherein the process in which an external reflection layer is formed on a side surface of the substrate includes a plating process.