SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
1. A semiconductor light emitting device comprising:
- a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface;
a light transmitting section provided on a side of the first major surface;
a wavelength conversion section provided over the light transmitting section;
a first conductive section provided on the first electrode section;
a second conductive section provided on the second electrode section; and
a sealing section provided on a side of the second major surface and sealing the first conductive section and the second conductive section while exposing an end portion of the first conductive section and an end portion of the second conductive section,the wavelength conversion section being formed from a resin mixed with a phosphor, and hardness of the cured resin being set to exceed 10 in Shore D hardness.
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Accused Products
Abstract
According to one embodiment, a semiconductor light emitting device includes a light emitting section, a light transmitting section, a wavelength conversion section, a first conductive section, a second conductive section and a sealing section. The light emitting section includes a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface. The light transmitting section is provided on a side of the first major surface. The wavelength conversion section is provided over the light transmitting section. The wavelength conversion section is formed from a resin mixed with a phosphor, and hardness of the cured resin is set to exceed 10 in Shore D hardness.
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Citations
20 Claims
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1. A semiconductor light emitting device comprising:
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a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface; a light transmitting section provided on a side of the first major surface; a wavelength conversion section provided over the light transmitting section; a first conductive section provided on the first electrode section; a second conductive section provided on the second electrode section; and a sealing section provided on a side of the second major surface and sealing the first conductive section and the second conductive section while exposing an end portion of the first conductive section and an end portion of the second conductive section, the wavelength conversion section being formed from a resin mixed with a phosphor, and hardness of the cured resin being set to exceed 10 in Shore D hardness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method for manufacturing a semiconductor light emitting device, the device including:
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a light emitting section including a first major surface, a second major surface opposite from the first major surface, and a first electrode section and a second electrode section formed on the second major surface; and a wavelength conversion section provided on a side of the first major surface and formed from a resin mixed with a phosphor, the method comprising; setting hardness of the cured resin to exceed 10 in Shore D hardness. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification