LIGHT SOURCE APPARATUS USING SEMICONDUCTOR LIGHT EMITTING DEVICE
First Claim
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1. A light source apparatus, comprising:
- a semiconductor light emitting device including a light emitting unit, a first conductive member, a second conductive member, a sealing member, and an optical layer;
a mounting substrate including a base body, a first substrate electrode, and a second substrate electrode, the first substrate electrode and the second substrate electrode being provided on a surface of the base body to oppose the semiconductor light emitting device;
a first connection member configured to electrically connect the first conductive member to the first substrate electrode; and
a second connection member configured to electrically connect the second conductive member to the second substrate electrode,the light emitting unit including;
a semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the second semiconductor layer and a portion of the first semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side of the semiconductor stacked body and a second major surface on a second semiconductor layer side of the semiconductor stacked body;
a first light emitting unit electrode electrically connected to the first semiconductor layer on a second major surface side; and
a second light emitting unit electrode electrically connected to the second semiconductor layer on the second major surface side,the first conductive member being electrically connected to the first light emitting unit electrode and including a first columnar portion provided on the second major surface,the second conductive member being electrically connected to the second light emitting unit electrode and including a second columnar portion provided on the second major surface,the sealing member covering a side surface of the first conductive member and a side surface of the second conductive member,the optical layer being provided on the first major surface of the semiconductor stacked body, the optical layer including a wavelength conversion unit, the wavelength conversion unit being configured to absorb an emitted light emitted from the light emitting layer and emit a light having a wavelength different from a wavelength of the emitted light,a surface area of the second substrate electrode being not less than 100 times a cross-sectional area of the second columnar portion cut by a plane parallel to the second major surface.
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Abstract
According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.
27 Citations
20 Claims
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1. A light source apparatus, comprising:
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a semiconductor light emitting device including a light emitting unit, a first conductive member, a second conductive member, a sealing member, and an optical layer; a mounting substrate including a base body, a first substrate electrode, and a second substrate electrode, the first substrate electrode and the second substrate electrode being provided on a surface of the base body to oppose the semiconductor light emitting device; a first connection member configured to electrically connect the first conductive member to the first substrate electrode; and a second connection member configured to electrically connect the second conductive member to the second substrate electrode, the light emitting unit including; a semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the second semiconductor layer and a portion of the first semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side of the semiconductor stacked body and a second major surface on a second semiconductor layer side of the semiconductor stacked body; a first light emitting unit electrode electrically connected to the first semiconductor layer on a second major surface side; and a second light emitting unit electrode electrically connected to the second semiconductor layer on the second major surface side, the first conductive member being electrically connected to the first light emitting unit electrode and including a first columnar portion provided on the second major surface, the second conductive member being electrically connected to the second light emitting unit electrode and including a second columnar portion provided on the second major surface, the sealing member covering a side surface of the first conductive member and a side surface of the second conductive member, the optical layer being provided on the first major surface of the semiconductor stacked body, the optical layer including a wavelength conversion unit, the wavelength conversion unit being configured to absorb an emitted light emitted from the light emitting layer and emit a light having a wavelength different from a wavelength of the emitted light, a surface area of the second substrate electrode being not less than 100 times a cross-sectional area of the second columnar portion cut by a plane parallel to the second major surface. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A light source apparatus, comprising:
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a semiconductor light emitting device including a light emitting unit, a first conductive member, a second conductive member, a sealing member, and an optical layer; a mounting substrate including a base body, a first substrate electrode, and a second substrate electrode, the first substrate electrode and the second substrate electrode being provided on a surface of the base body to oppose the semiconductor light emitting device; a first connection member configured to electrically connect the first conductive member to the first substrate electrode; and a second connection member configured to electrically connect the second conductive member to the first substrate electrode, the light emitting unit including; a semiconductor stacked body including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the second semiconductor layer and a portion of the first semiconductor layer, the semiconductor stacked body having a first major surface on a first semiconductor layer side of the semiconductor stacked body and a second major surface on a second semiconductor layer side of the semiconductor stacked body; a first light emitting unit electrode electrically connected to the first semiconductor layer on a second major surface side; and a second light emitting unit electrode electrically connected to the second semiconductor layer on the second major surface side, the first conductive member being electrically connected to the first light emitting unit electrode and including a first columnar portion provided on the second major surface, the second conductive member being electrically connected to the second light emitting unit electrode and including a second columnar portion provided on the second major surface, the sealing member covering a side surface of the first conductive member and a side surface of the second conductive member, the optical layer being provided on the first major surface of the semiconductor stacked body, the optical layer including a wavelength conversion unit, the wavelength conversion unit being configured to absorb an emitted light emitted from the light emitting layer and emit a light having a wavelength different from a wavelength of the emitted light, a surface area of the second substrate electrode being not less than 30 times a cross-sectional area of the light emitting unit cut by a plane parallel to the second major surface. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification
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Current AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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Original AssigneeKabushiki Kaisha Toshiba (Toshiba Corporation)
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InventorsHiguchi, Kazuhito, Obata, Susumu, NISHIUCHI, Hideo, Nakayama, Toshiya
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/98
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CPC Class CodesH01L 2224/06051 Bonding areas having differ...H01L 24/06 of a plurality of bonding a...H01L 2924/00 Indexing scheme for arrange...H01L 2924/12041 LEDH01L 2933/0066 relating to arrangements fo...H01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...H01L 33/507 the elements being in intim...H01L 33/508 having a non-uniform spatia...H01L 33/647 the elements conducting ele...
