Semiconductor device and manufacturing method for the same

• US 20110298055A1
• Filed: 08/10/2011
• Published: 12/08/2011
• Est. Priority Date: 04/04/2005
• Status: Active Grant

• Current Assignee: Katana Silicon Technologies LLC (Tanit Ventures Inc.)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Nakajima, Kazuaki, Suguro, Kyoichi
• Granted Patent: US 8,441,073 B2
• Time in Patent Office: Days
• US Class Current: 257/369
• CPC Class Codes: H01L 21/28079 the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 29/4958 with a multiple layer structure
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/6656 using multiple spacer layers, e.g. multiple sidewall spacers
• CPC Class Codes: H01L 29/6659 with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
• CPC Class Codes: H01L 29/7833 with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: Y10S 438/976 Temporary protective layer

Abstract

In a semiconductor substrate on which are formed an N-type MOS transistor and a P-type MOS transistor, the gate electrode of the N-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the gate electrode of the P-type MOS transistor comprises a tungsten film, which makes contact with a gate insulation film, and the concentration of carbon contained in the former tungsten film is less than the concentration of carbon contained in the latter tungsten film.

Claims

1. A semiconductor device, comprising:

an N-type MOS transistor having a first gate electrode comprising a first conductor film, which comes in contact with a gate insulation film; and

a P-type MOS transistor having a second gate electrode comprising a second conductor film, which comes in contact with the gate insulation film, and which contains carbon in a higher concentration than the concentration of carbon contained in the first conductor film.

2. The semiconductor device according to claim 1, wherein at the least a part of the first gate electrode of the N-type MOS transistor is covered by an insulation film containing 1E21 cm⁻

3 or more of hydrogen.

3. The semiconductor device according to claim 1, wherein the work function of the second conductor film is not less than 4.8 eV but less than 5.1 eV.

4. The semiconductor device according to claim 2, wherein the work function of the second conductor film is not less than 4.8 eV but less than 5.1 eV.

5. The semiconductor device according to claim 3, wherein the first conductor film and the second conductor film are made from the same metal material or the same alloy material.

6. The semiconductor device according to claim 4, wherein the first conductor film and the second conductor film are made from the same metal material or the same alloy material.

7. The semiconductor device according to claim 2, wherein the insulation film is a silicon nitride film.

8. The semiconductor device according to claim 1, wherein the first gate electrode and the second gate electrode, respectively, comprise a polysilicon film having a metal silicide layer on the surface thereof, on the first conductor film and the second conductor film.

9. The semiconductor device according to claim 2, wherein the insulation film is disposed on an interlayer insulation film formed to the same height as the first gate electrode and the second gate electrode, which are formed on a substrate.

10-20. -20. (canceled)