Wafer Plane Detection of Lithographically Significant Contamination Photomask Defects

• US 20110299758A1
• Filed: 08/30/2010
• Published: 12/08/2011
• Est. Priority Date: 01/11/2007
• Status: Active Grant

• Current Assignee: KLA-Tencor Corporation (KLA Corporation)
• Original Assignee: KLA-Tencor Corporation (KLA Corporation)
• Inventors: Shi, Ruifang, Xiong, Yalin
• Granted Patent: US 8,611,637 B2
• Time in Patent Office: Days
• US Class Current: 382/144
• CPC Class Codes: G03F 1/84 Inspecting

Abstract

Provided are novel methods and systems for inspecting photomasks to identify lithographically significant contamination defects. Inspection may be performed without a separate reference image provided from a database or another die. Inspection techniques described herein involve capturing one or more test images of a photomask and constructing corresponding test “simulation” images using specific lithographic and/or resist models. These test simulation images simulate printable and/or resist patterns of the inspected photomask. Furthermore, the initial test images are used in parallel operations to generate “synthetic” images. These images represent a defect-free photomask pattern. The synthetic images are then used for generating reference simulation images, which are similar to the test simulation images but are free from lithographically significant contamination defects. Finally, the reference simulation images are compared to the test simulation images to identify the lithographically significant contamination defects on the photomask.

Claims

1. A method for inspecting a photomask to identify lithographically significant contamination defects, the method comprising:

providing the photomask comprising one or more printable features and one or more non-printable features, the photomask configured to achieve lithographic transfer of the one or more printable features onto a substrate using a lithography system;

producing test images of the photomask using an inspection apparatus, the test images comprising a test transmission image and a test reflection image;

providing a model of the lithography system to be employed in the lithographic transfer;

constructing test simulation images by applying the model of the lithography system to the test images;

constructing synthetic reference images from the test images by removing defects from the test images;

constructing reference simulation images from the synthetic reference images by applying the model of the lithography system to the synthetic reference images, wherein the reference simulation images are constructed to be free of the lithographically contamination significant defects; and

comparing the test simulation images to the reference simulation images to identify the lithographically significant contamination defects.

2. The method of claim 1, further comprising aligning the test transmission image with respect to the test reflection image.

3. The method of claim 1, further comprising:

providing a model of a photoresist system to be employed in the lithographic transfer; and

constructing the test simulation images and the reference simulation images by applying the model of the photoresist system in addition to applying the model of the lithography system.

4. The method of claim 3, wherein the model of the photoresist system comprises resist forming process characteristics.

5. The method of claim 1, wherein the lithographically significant contamination defects are identified without using a reference die or a reference database.

6. The method of claim 1, wherein the reference simulation images comprise a reference simulation transmission image and a reference simulation reflection image, and wherein the test simulation images comprise a test simulation transmission image and a test simulation reflection image.

7. The method of claim 6, wherein comparing the test simulation images to the reference simulation images comprises:

comparing the reference simulation transmission image to the test simulation transmission image; and

comparing the reference simulation reflection image to the test simulation reflection image.

8. The method of claim 1, further comprising classifying the lithographically significant contamination defects.

9. The method of claim 1, wherein the one or more non-printable features comprise sub-resolution assist features (SRAF).

10. The method of claim 1, wherein lithographic effects of the one or more non-printable features are captured in the test simulation images and the reference simulation images.

11. The method of claim 1, wherein at least one of the non-printable features is larger than at least one of the printable features.

12. The method of claim 1, wherein constructing the test simulation images comprises constructing a band limited mask pattern comprising only linear terms.

13. The method of claim 12, wherein constructing the test simulation images comprises separating the one or more non-printable features from the one or more printable features based on optical intensity distributions of the band limited mask pattern.

14. The method of claim 12, further comprising constructing a geometrical map based on the band limited mask pattern for classifying geometrical features into one or more geometrical feature types selected from the group consisting of edges, corners, and line ends.

15. The method of claim 14, further comprising using the geometrical map to classify the geometrical features while identifying the lithographically significant contamination defects.

16. The method of claim 14, wherein identifying the lithographically significant contamination defects comprises applying different detection thresholds to at least two different geometrical feature types of the geometrical map.

17. The method of claim 1, further comprising building a feature map based on the test simulation images, wherein the feature map comprises multiple image portions each having a corresponding Mask Error Enhancement Factor (MEEF).

18. The method of claim 17, further comprising, during identifying the lithographically significant contamination defects, automatically adjusting detection thresholds for each image portion of the multiple image portions based on the corresponding MEEFs.

19. The method of claim 1, further comprising providing a user-defined detection threshold for identifying the lithographically significant contamination defects.

20. The method of claim 1, wherein the model of the lithography system comprises at least one the following parameters:

numerical apertures of the lithographic system and the inspection apparatus, wavelengths of the lithographic system and the inspection apparatus, and illumination conditions of the lithographic system and the inspection apparatus.

21. A system for inspecting a photomask having one or more printable features and one or more non-printable features to identify lithographically significant contamination defects comprising at least one memory and at least one processor that are configured to perform the following operations:

producing test images of the photomask, the test images comprising a test transmission image and a test reflection image;

constructing test simulation images by applying a model of a lithography system to the test images;

constructing synthetic reference images from the test images by removing defects from the test images;

constructing reference simulation images from the synthetic reference images by applying the model of the lithography system to the synthetic reference images, wherein the reference simulation images are free from the lithographically significant contamination defects; and

comparing the test simulation images to the reference simulation images to identify the lithographically significant contamination defects.