METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE

• US 20110300644A1
• Filed: 06/06/2011
• Published: 12/08/2011
• Est. Priority Date: 06/07/2010
• Status: Active Grant

• Current Assignee: Alpad Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Akimoto, Yosuke, Kojima, Akihiro, Izuka, Miyuki, Sugizaki, Yoshiaki, Koizumi, Hiroshi, Naka, Tomomichi, Okada, Yasuhide
• Granted Patent: US 8,399,275 B2
• Time in Patent Office: Days
• US Class Current: 438/7
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2933/0041 relating to wavelength conversion elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/486 adapted for surface mounting
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

Claims

1. A method for manufacturing a semiconductor light emitting device, comprising:

forming a first interconnect layer in a first opening provided in a first insulating layer included in a stacked body, the stacked body including;

a substrate;

a plurality of semiconductor layers separated by a separation trench on the substrate, each of the semiconductor layers including a first major surface, a second major surface opposite to the first major surface and a light emitting layer;

a first electrode provided on a region including the light emitting layer on the second major surface opposite to the substrate;

a second electrode provided on the second major surface; and

the first insulating layer provided on the second major surface side and including the first opening communicating with the first electrode and a second opening communicating with the second electrode;

forming a second interconnect layer in the second opening in the first insulating layer;

forming a first metal pillar on a face of the first interconnect layer opposite to the first electrode;

forming a second metal pillar on a face of the second interconnect layer opposite to the second electrode;

forming a second insulating layer between a side face of the first metal pillar and a side face of the second metal pillar;

forming a transparent material on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side, the transparent material transmitting the light; and

forming a phosphor layer on the transparent material and the first major surface of the plurality of the semiconductor layers.

2. The method of claim 1, wherein the phosphor layer having a flat top face is formed.

3. The method of claim 1, wherein the forming the transparent material includes supplying a liquid transparent resin on the first major surface, and curing the supplied liquid resin.

4. The method of claim 3, wherein an amount of the transparent resin is adjusted on the basis of the emission spectrum.

5. The method of claim 1, further comprising calculating a chromaticity variation in a wafer plane, the wafer including the plurality of semiconductor layers,

the transparent material being formed on the basis of the chromaticity variation.

6. The method of claim 1, wherein the transparent material is formed thicker on a portion with the relatively thinner phosphor layer.

7. The method of claim 1, wherein a distance from the first major surface of the semiconductor layer to an top face of the phosphor layer is generally the same on a portion with the transparent material and on a portion without the transparent material.

8. The method of claim 1, further comprising, before the forming the transparent material, applying a voltage between the first major surface exposed by removing the substrate and the first interconnect layer to emit light from the light emitting layer;

and measuring the emission spectrum of the light emitted from the first major surface.

9. A method for manufacturing a semiconductor light emitting device, comprising:

forming a first interconnect layer in a first opening provided in a first insulating layer included in a stacked body, the stacked body including;

a substrate;

a plurality of semiconductor layers separated by a separation trench on the substrate, each of the semiconductor layers including a first major surface, a second major surface opposite to the first major surface and a light emitting layer;

a first electrode provided on a region including the light emitting layer on the second major surface opposite to the substrate;

a second electrode provided on the second major surface; and

the first insulating layer provided on the second major surface side and including the first opening communicating with the first electrode and a second opening communicating with the second electrode;

forming a second interconnect layer in the second opening in the first insulating layer;

forming a first metal pillar on a face of the first interconnect layer opposite to the first electrode;

forming a second metal pillar on a face of the second interconnect layer opposite to the second electrode;

forming a second insulating layer between a side face of the first metal pillar and a side face of the second metal pillar;

forming a first phosphor layer on the first major surface;

forming a transparent material on the first phosphor layer on a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first phosphor layer side, the transparent material transmitting the light; and

forming a second phosphor layer on the transparent material and the first phosphor layer.

10. The method of claim 9, wherein the first phosphor layer includes phosphor particles being same as phosphor particles included in the second phosphor layer.

11. The method of claim 9, wherein the first phosphor layer has a film thickness thinner than the second phosphor layer, and includes phosphor particles with a high concentration.

12. The method of claim 10, wherein

the first phosphor layer and the second phosphor layer include red phosphor particles excited by light emitted from the light emitting layer to emit red light and green phosphor particles excited by the light emitted from the light emitting layer to emit green light, and

the first phosphor layer has a lower relative concentration of the green phosphor particles to the red phosphor particles than the second phosphor layer.

13. The method of claim 12, wherein the transparent material is interfused with the green phosphor particles.

14. The method of claim 9, wherein the first phosphor layer and the second phosphor layer are formed so that each of top surfaces is planar.

15. The method of claim 9, wherein the forming the transparent material includes

supplying a liquid transparent resin onto the first phosphor layer, and

curing the transparent resin supplied onto the first phosphor layer.

16. The method of claim 9, wherein the transparent material is formed thicker on a portion where the second phosphor layer is relatively thinner.

17. The method of claim 9, wherein a distance from the first major surface of the semiconductor layer to a top surface of the second phosphor layer is generally the same on a portion with the transparent material and a portion without the transparent material.

18. The method of claim 9, further comprising:

after the forming the first phosphor layer and before the forming the transparent material, applying a voltage between a face of the first metal pillar opposite to the first interconnect layer and a face of the second metal pillar opposite to the second interconnect layer to emit light from the light emitting layer; and

measuring the emission spectrum of the light emitted from the first major surface via the first phosphor layer.

19. The method of claim 15, wherein a supply amount of the transparent material is adjusted on the basis of the emission spectrum.