Methods Of Manufacturing P-Type Zn Oxide Nanowires And Electronic Devices Including P-Type Zn Oxide Nanowires

• US 20110303912A1
• Filed: 05/13/2011
• Published: 12/15/2011
• Est. Priority Date: 06/10/2010
• Status: Abandoned Application

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Cha, Seung-nam, Park, Young-jun, Hong, Jin-pyo
• Application Number:
  US13/107,151
• Publication Number:
  US 20110303912A1
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02422 Non-crystalline insulating materials, e.g. glass, polymers
• CPC Class Codes: H01L 21/02554 Oxides
• CPC Class Codes: H01L 21/02579 P-type
• CPC Class Codes: H01L 21/02603 Nanowires
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 21/02645 Seed materials
• CPC Class Codes: H01L 21/228 using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes H01L21/221 - H01L21/222 take precedence
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0676 oriented perpendicular or at an angle to a substrate
• CPC Class Codes: H01L 29/225 in different semiconductor regions , e.g. heterojunctions

Abstract

Example embodiments relate to methods of manufacturing p-type Zn oxide nanowires and electronic devices including the p-type Zn oxide nanowires. The method may include forming Zn oxide nanowires in an aqueous solution by using a hydrothermal synthesis method and annealing the Zn oxide nanowires to form p-type Zn oxide nanowires.

Claims

1. A method of manufacturing p-type Zn oxide nanowires, the method comprising:

forming a seed layer on a substrate;

exposing the seed layer to an aqueous solution including a Zn salt, a reductant, and a doping material to form Zn oxide nanowires on the substrate; and

annealing the Zn oxide nanowires to form the p-type Zn oxide nanowires.

2. The method of claim 1, wherein the substrate is formed of a semiconductor, a nonconductor, or a metal.

3. The method of claim 1, wherein the substrate is formed of Si, glass, plastic, or polymer.

4. The method of claim 1, wherein the seed layer is formed of Zn oxide.

5. The method of claim 1, wherein the reductant is a hexamethylenetetramine (HMTA).

6. The method of claim 1, wherein the doping material is a lithium salt.

7. The method of claim 1, wherein the aqueous solution is maintained at a temperature ranging from about 85°

C. to about 100°

C.

8. The method of claim 1, wherein the aqueous solution has a pH ranging from about 10 to about 11.

9. The method of claim 1, wherein the annealing is performed at a temperature ranging from about 400°

C. to about 600°

C.

10. An electronic device comprising:

a bottom electrode on a substrate;

an n-type Zn oxide layer on the bottom electrode;

a plurality of p-type Zn oxide nanowires on the n-type Zn oxide layer, the plurality of p-type Zn oxide nanowires including lithium; and

a top electrode on the plurality of p-type Zn oxide nanowires.

11. An electronic device comprising:

a bottom electrode on a first surface of a substrate;

an n-type semiconductor layer on an opposing second surface of the substrate;

a plurality of p-type Zn oxide nanowires on the n-type semiconductor layer, the plurality of p-type Zn oxide nanowires including lithium; and

a top electrode on the plurality of p-type Zn oxide nanowires.

12. The electronic device of claim 11, wherein the substrate includes an n-type semiconductor material.