Semiconductor Device
First Claim
1. A semiconductor device comprising:
- a gate electrode;
a first insulating film comprising an element of Group 13 and oxygen over the gate electrode;
an oxide semiconductor film over the first insulating film; and
a second insulating film over the oxide semiconductor film,wherein the first insulating film is in contact with a first face of the oxide semiconductor film, andwherein the second insulating film is in contact with a second face of the oxide semiconductor film.
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Accused Products
Abstract
One object is to provide a semiconductor device including an oxide semiconductor with improved electrical characteristics. The semiconductor device includes a first insulating film including an element of Group 13 and oxygen; an oxide semiconductor film partly in contact with the first insulating film; a source electrode and a drain electrode electrically connected to the oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; and a second insulating film partly in contact with the oxide semiconductor film, between the oxide semiconductor film and the gate electrode. Further, the first insulating film including an element of Group 13 and oxygen includes a region where an amount of oxygen is greater than that in a stoichiometric composition ratio.
25 Citations
22 Claims
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1. A semiconductor device comprising:
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a gate electrode; a first insulating film comprising an element of Group 13 and oxygen over the gate electrode; an oxide semiconductor film over the first insulating film; and a second insulating film over the oxide semiconductor film, wherein the first insulating film is in contact with a first face of the oxide semiconductor film, and wherein the second insulating film is in contact with a second face of the oxide semiconductor film. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a gate electrode; a first insulating film over the gate electrode; an oxide semiconductor film over the first insulating film; and a second insulating film including an element of Group 13 and oxygen over the oxide semiconductor film, wherein the first insulating film is in contact with a first face of the oxide semiconductor film, and wherein the second insulating film is in contact with a second face of the oxide semiconductor film. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a gate electrode; a first insulating film including an element of Group 13 and oxygen over the gate electrode; an oxide semiconductor film over the first insulating film; and a second insulating film including an element of Group 13 and oxygen over the oxide semiconductor film, wherein the first insulating film is in contact with a first face of the oxide semiconductor film, and wherein the second insulating film is in contact with a second face of the oxide semiconductor film. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22)
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Specification