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Semiconductor Device

  • US 20110303914A1
  • Filed: 06/06/2011
  • Published: 12/15/2011
  • Est. Priority Date: 06/11/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode;

    a first insulating film comprising an element of Group 13 and oxygen over the gate electrode;

    an oxide semiconductor film over the first insulating film; and

    a second insulating film over the oxide semiconductor film,wherein the first insulating film is in contact with a first face of the oxide semiconductor film, andwherein the second insulating film is in contact with a second face of the oxide semiconductor film.

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