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SEMICONDUCTOR DEVICE AND PRODUCTION METHOD

  • US 20110303973A1
  • Filed: 05/26/2011
  • Published: 12/15/2011
  • Est. Priority Date: 06/15/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device provided with:

  • a first planar semiconductor layer;

    a first columnar semiconductor layer formed on the first planar semiconductor layer;

    a first high concentration semiconductor layer formed on the first planar semiconductor layer and the lower region of the first columnar semiconductor layer;

    a second high concentration semiconductor layer of the same conductive type as the first high concentration semiconductor layer, formed on the upper region of the first columnar semiconductor layer;

    a first gate insulating film formed on the sidewall of the first columnar semiconductor layer between the first high concentration semiconductor layer and the second high concentration semiconductor layer, so as to surround the first columnar semiconductor layer;

    a first metal film formed on the first gate insulating film so as to surround the first gate insulating film;

    a first semiconductor film formed on the first metal film so as to surround the first metal film;

    a first gate electrode composed of the first metal film and the first semiconductor film;

    a first insulating film formed between the first gate electrode and the first planar semiconductor layer;

    a second insulating film formed in sidewall shape contacting the upper sidewall of the first columnar semiconductor layer and the top surface of the first gate electrode so as to surround the upper region of the first columnar semiconductor layer;

    a third insulating film formed in a sidewall shape contacting the sidewall of the first insulating film and the first gate electrode so as to surround the first gate electrode and the first insulating film;

    a first contact formed above the first columnar semiconductor layer;

    a second contact formed above the first planar semiconductor layer; and

    a third contact formed above the first gate electrode;

    wherein the first gate insulating film and the first metal film are covered by the first columnar semiconductor layer, the first semiconductor film, the first insulating film and the second insulating film.

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