SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREFOR
First Claim
1. A semiconductor device comprising:
- a first planar semiconductor layer;
a first columnar semiconductor layer formed on the first planar semiconductor layer;
a first highly doped semiconductor layer formed in a lower region of the first columnar semiconductor layer and the first planar semiconductor layer;
a second highly doped semiconductor layer formed in an upper region of the first columnar semiconductor layer and having a conductivity type same as a conductivity type of the first highly doped semiconductor layer;
a first gate insulating film formed so as to surround the first columnar semiconductor layer on a sidewall of the first columnar semiconductor layer between the first highly doped semiconductor layer and the second highly doped semiconductor layer;
a first gate electrode formed so as to surround the first gate insulating film on the first gate insulating film;
a first insulating film formed between the first gate electrode and the first planar semiconductor layer;
a first insulating film sidewall formed so as to contact a top surface of the first gate electrode and an upper sidewall of the first columnar semiconductor layer, and to surround the upper region of the first columnar semiconductor layer;
a second metal-semiconductor compound layer formed in the same layer as the first planar semiconductor layer so as to contact the first highly doped semiconductor layer; and
a first electric contact formed on the second highly doped semiconductor layer, whereinthe first electric contact and the second highly doped semiconductor layer are connected directly andthe first gate electrode includes a first metal-semiconductor compound layer.
2 Assignments
0 Petitions
Accused Products
Abstract
The semiconductor device includes: a columnar silicon layer on the planar silicon layer; a first n+ type silicon layer formed in a bottom area of the columnar silicon layer; a second n+ type silicon layer formed in an upper region of the columnar silicon layer; a gate insulating film formed in a perimeter of a channel region between the first and second n+ type silicon layers; a gate electrode formed in a perimeter of the gate insulating film, and having a first metal-silicon compound layer; an insulating film formed between the gate electrode and the planar silicon layer, an insulating film sidewall formed in an upper sidewall of the columnar silicon layer; a second metal-silicon compound layer formed in the planar silicon layer; and an electric contact formed on the second n+ type silicon layer.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a first planar semiconductor layer; a first columnar semiconductor layer formed on the first planar semiconductor layer; a first highly doped semiconductor layer formed in a lower region of the first columnar semiconductor layer and the first planar semiconductor layer; a second highly doped semiconductor layer formed in an upper region of the first columnar semiconductor layer and having a conductivity type same as a conductivity type of the first highly doped semiconductor layer; a first gate insulating film formed so as to surround the first columnar semiconductor layer on a sidewall of the first columnar semiconductor layer between the first highly doped semiconductor layer and the second highly doped semiconductor layer; a first gate electrode formed so as to surround the first gate insulating film on the first gate insulating film; a first insulating film formed between the first gate electrode and the first planar semiconductor layer; a first insulating film sidewall formed so as to contact a top surface of the first gate electrode and an upper sidewall of the first columnar semiconductor layer, and to surround the upper region of the first columnar semiconductor layer; a second metal-semiconductor compound layer formed in the same layer as the first planar semiconductor layer so as to contact the first highly doped semiconductor layer; and a first electric contact formed on the second highly doped semiconductor layer, wherein the first electric contact and the second highly doped semiconductor layer are connected directly and the first gate electrode includes a first metal-semiconductor compound layer. - View Dependent Claims (2, 3, 8, 9, 10)
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4. A semiconductor device comprising a first transistor and a second transistor, the first transistor comprising:
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a first planar semiconductor layer; a first columnar semiconductor layer formed on the first planar semiconductor layer; a first highly doped semiconductor layer of a second-conductivity type formed in the lower region of the first columnar semiconductor layer and the first planar semiconductor layer; a second highly doped semiconductor layer of the second-conductivity type formed in the upper region of the 1st columnar semiconductor layer; a first gate insulating film formed so as to surround the first columnar semiconductor layer on a sidewall of the first columnar semiconductor layer between the first highly doped semiconductor layer and the second highly doped semiconductor layer; a first gate electrode formed so as to surround the first gate insulating film on the first gate insulating film; a first insulating film formed between the first gate electrode and the first planar semiconductor layer; a first insulating film sidewall formed so as to contact to a top surface of the first gate electrode and an upper sidewall of the first columnar semiconductor layer and to surround the upper region of the first columnar semiconductor layer; a second metal-semiconductor compound layer formed in the same layer as the first planar semiconductor layer so as to contact to the first highly doped semiconductor layer; and a first electric contact formed on the second highly doped semiconductor layer, and the second transistor comprising; a second planar semiconductor layer; a second columnar semiconductor layer formed on the second planar semiconductor layer; a third highly doped semiconductor layer of a first conductivity type formed in a lower region of the second columnar semiconductor layer and the second planar semiconductor layer; a fourth highly doped semiconductor layer of the first conductivity type formed in an upper region of the second columnar semiconductor layer; a second gate insulating film formed so as to surround the second columnar semiconductor layer on a sidewall of the second columnar semiconductor layer between the third highly doped semiconductor layer and the fourth highly doped semiconductor layer; a second gate electrode formed so as to surround the second gate insulating film on the second gate insulating film; a second insulating film formed between the second gate electrode and the second planar semiconductor layer; a second insulating film sidewall formed so as to contact to a top surface of the second gate electrode and an upper sidewall of the second columnar semiconductor layer, and to surround the upper region of the second columnar semiconductor layer; a fourth metal-semiconductor compound layer formed in the same layer as the second planar semiconductor layer so as to contact the third highly doped semiconductor layer; and a second electric contact formed on the fourth highly doped semiconductor layer, wherein the first electric contact and the second highly doped semiconductor layer are connected directly, the second electric contact and the fourth highly doped semiconductor layer are connected directly, the first gate electrode includes a first metal-semiconductor compound layer, and the second gate electrode includes a third metal-semiconductor compound layer. - View Dependent Claims (5, 6, 7, 11, 12)
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Specification