LATERAL TRENCH MOSFET HAVING A FIELD PLATE
First Claim
1. A method of forming an integrated circuit, comprising:
- forming an epitaxial (EPI) layer having a second conductivity type on a semiconductor body having a second conductivity type, and counterdoped by a deep well having the first conductivity type;
forming a trench in the EPI layer;
forming a drain in the semiconductor body, the drain being laterally spaced from the trench;
forming a gate dielectric in the trench; and
forming a field plate dielectric that is thicker than the gate dielectric in some, but not all, portions of the trench;
forming a gate electrode region extending at least partially beneath the surface of the semiconductor body in the trench; and
forming a field plate region that is laterally contiguous with the gate electrode region and laterally disposed between the drain and the gate electrode region.
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Accused Products
Abstract
One embodiment relates to an integrated circuit that includes a lateral trench MOSFET disposed in a semiconductor body. The lateral trench MOSFET includes source and drain regions having a body region therebetween. A gate electrode region is disposed in a trench that extends beneath the surface of the semiconductor body at least partially between the source and drain. A gate dielectric separates the gate electrode region from the semiconductor body. In addition, a field plate region in the trench is coupled to the gate electrode region, and a field plate dielectric separates the field plate region from the semiconductor body. Other integrated circuits and methods are also disclosed.
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Citations
11 Claims
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1. A method of forming an integrated circuit, comprising:
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forming an epitaxial (EPI) layer having a second conductivity type on a semiconductor body having a second conductivity type, and counterdoped by a deep well having the first conductivity type; forming a trench in the EPI layer; forming a drain in the semiconductor body, the drain being laterally spaced from the trench; forming a gate dielectric in the trench; and forming a field plate dielectric that is thicker than the gate dielectric in some, but not all, portions of the trench; forming a gate electrode region extending at least partially beneath the surface of the semiconductor body in the trench; and forming a field plate region that is laterally contiguous with the gate electrode region and laterally disposed between the drain and the gate electrode region. - View Dependent Claims (2)
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3. A method of forming an integrated circuit, comprising:
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forming an epitaxial layer of semiconductor material of first conductivity type over a semiconductor substrate; forming a laterally elongated trench in the epitaxial layer; forming a layer of dielectric material on sidewalls and a bottom of the trench; forming a layer of hard mask material over the dielectric layer within the trench; forming a deep well of the first conductivity type in the epitaxial layer laterally spaced from an end of the trench; performing a first etch to remove a selected portion of the layer of dielectric material from the sidewalls and bottom at an opposite end of the trench; forming a shallow well of a second conductivity type to define a body region of a MOSFET within the epitaxial layer, underneath and surrounding sides of a remaining portion of the layer of dielectric material proximate the opposite end;
including implanting dopant underneath the remaining portion through a portion of the trench vacated by the removed portion of the layer of dielectric material;forming a shallow implant region of the first conductivity type to define a source region of the MOSFET underneath and surrounding the opposite end of the trench; performing a second etch through the portion of the trench vacated by the removed portion of the layer of dielectric material to remove another portion of the first layer of dielectric material from the sidewalls and bottom proximate the opposite end of the trench; removing the layer of hard mask material from the trench; forming a gate dielectric layer over the sidewalls and bottom of portions of the vacated by the removed portion and removed another portion of the layer of dielectric material; and forming a layer of gate electrode material within the trench, to define a gate electrode of the MOSFET over the layer of gate dielectric material and to define a field plate of the MOSFET over remaining portions of the layer of dielectric material. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11)
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Specification