COMPOSITE FILM AND SEMICONDUCTOR LIGHT EMITTING DEVICE USING THE SAME

• US 20110309398A1
• Filed: 06/21/2011
• Published: 12/22/2011
• Est. Priority Date: 06/22/2010
• Status: Abandoned Application

• Current Assignee: Nitto Denko Corporation
• Original Assignee: Nitto Denko Corporation
• Inventors: ITO, Hisataka, NAKAMURA, Toshitaka, FUJII, Hironaka
• Application Number:
  US13/164,909
• Publication Number:
  US 20110309398A1
• Time in Patent Office: Days
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2924/00012 Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/181 Encapsulation
• CPC Class Codes: H01L 33/505 characterised by the shape, e.g. plate or foil
• CPC Class Codes: H01L 33/507 the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
• CPC Class Codes: H01L 33/54 having a particular shape
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: Y10T 428/24802 Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]

Abstract

The present invention relates to a composite film including a wavelength conversion layer and a diffusive reflection resin layer in a laminated state and being used in a semiconductor light emitting device, in which the wavelength conversion layer contains a phosphor material which absorbs a part or all of excitation light and is excited to emit visible light in a wavelength region longer than a wavelength of the excitation light, the diffusive reflection resin layer is selectively formed with patterning on one surface of the wavelength conversion layer, and a region on the one surface of the wavelength conversion layer where the diffusive reflection resin layer is not formed with patterning is a path of the excitation light which excites the phosphor material in the wavelength conversion layer.

Claims

1. A composite film comprising a wavelength conversion layer and a diffusive reflection resin layer in a laminated state and being used in a semiconductor light emitting device,

wherein the wavelength conversion layer contains a phosphor material which absorbs a part or all of excitation light and is excited to emit visible light in a wavelength region longer than a wavelength of the excitation light,

the diffusive reflection resin layer is selectively formed with patterning on one surface of the wavelength conversion layer, and

a region on the one surface of the wavelength conversion layer where the diffusive reflection resin layer is not formed with patterning is a path of the excitation light which excites the phosphor material in the wavelength conversion layer.

2. The composite film according to claim 1, wherein the wavelength of the excitation light is in the range of 350 to 480 nm.

3. The composite film according to claim 1, wherein the diffusive reflection resin layer is formed from a cured material of a resin composition containing a transparent resin and an inorganic filler different in refractive index from the transparent resin, and a diffuse reflectance of the diffusive reflection resin layer is 80% or more at the wavelength of 430 nm.

4. The composite film according to claim 1, wherein the region on the one surface of the wavelength conversion layer where the diffusive reflection resin layer is not formed with patterning is filled with a transparent resin.

5. The composite film according to claim 4, wherein the transparent resin is a silicone resin.

6. The composite film according to claim 5, wherein the silicone resin is a gel-form silicone resin.

7. The composite film according to claim 1, wherein an adhesive layer or a pressure-sensitive adhesive layer is formed on a surface of the diffusive reflection resin layer.

8. The composite film according to claim 7, wherein the adhesive layer or the pressure-sensitive adhesive layer comprises a thermosetting resin composition comprising the following components (a) to (e):

(a) a dual-end silanol type silicone resin,

(b) an alkenyl group-containing silicon compound,

(c) an organohydrogensiloxane,

(d) a condensation catalyst, and

(e) a hydrosilylation catalyst.

9. The composite film according to claim 7, wherein the adhesive layer or the pressure-sensitive adhesive layer has a storage elastic modulus at 25°

C. of 1.0×

10⁶ Pa or less and has a storage elastic modulus at 25°

C. of 1.0×

10⁶ Pa or more after subjected to a heating treatment at 200°

C. for 1 hour.

10. The composite film according to claim 1, wherein the wavelength conversion layer is a phosphor plate which comprises a translucent ceramic comprising a polycrystalline sintered body whose sintered density is 99.0% or more, having a total light transmittance of 40% or more in a visible light wavelength region excluding an excitation wavelength region, and having a thickness of 100 to 1,000 μ

m.

11. The composite film according to claim 1, wherein the wavelength conversion layer is a phosphor sheet being formed by dispersing phosphor particles into a binder resin, having a total light transmittance of 40% or more in a visible light wavelength region excluding the excitation wavelength region, and having a thickness of 50 to 200 μ

m.

12. The composite film according to claim 1, wherein the wavelength conversion layer is either one composed of one wavelength conversion layer or one formed by laminating a plurality of wavelength conversion layers.

13. A semiconductor light emitting device comprising:

the composite film according to claim 1; and

at least one piece of an LED,

wherein the composite film is provided in a state that the wavelength conversion layer faces to a light extraction direction of the semiconductor light emitting device and the excitation light from the LED enters into the path of the excitation light.

14. The semiconductor light emitting device according to claim 13, wherein the diffusive reflection resin layer is wholly in contact with the LED and the wavelength conversion layer.

15. The semiconductor light emitting device according to claim 13, wherein an optical member is disposed on a surface at a light extraction side of the composite film.