SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- a first gate electrode;
a first gate insulating film over the first gate electrode;
an oxide semiconductor film in contact with the first gate insulating film and overlapping with the first gate electrode;
a source electrode and a drain electrode in contact with the oxide semiconductor film;
a second gate insulating film over the source electrode and the drain electrode and be in contact with the oxide semiconductor film; and
a second gate electrode in contact with the second gate insulating film and overlapping with the oxide semiconductor film,wherein the first gate insulating film has a structure in which a first metal oxide film containing an element belonging to Group 13 and a first insulating film containing oxygen are stacked in this order from the first gate electrode side, andwherein the second gate insulating film has a structure in which a second insulating film containing oxygen and a second metal oxide film containing an element belonging to Group 13 are stacked in this order from the oxide semiconductor film side.
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Abstract
An object is to provide a semiconductor device including an oxide semiconductor, which has stable electric characteristics and high reliability. In a transistor including an oxide semiconductor film, the oxide semiconductor film is subjected to dehydration or dehydrogenation performed by heat treatment. In addition, as a gate insulating film in contact with the oxide semiconductor film, an insulating film containing oxygen, preferably, a gate insulating film including a region containing oxygen with a higher proportion than the stoichiometric composition is used. Thus, oxygen is supplied from the gate insulating film to the oxide semiconductor film. Further, a metal oxide film is used as part of the gate insulating film, whereby reincorporation of an impurity such as hydrogen or water into the oxide semiconductor is suppressed.
38 Citations
21 Claims
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1. A semiconductor device comprising:
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a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film in contact with the first gate insulating film and overlapping with the first gate electrode; a source electrode and a drain electrode in contact with the oxide semiconductor film; a second gate insulating film over the source electrode and the drain electrode and be in contact with the oxide semiconductor film; and a second gate electrode in contact with the second gate insulating film and overlapping with the oxide semiconductor film, wherein the first gate insulating film has a structure in which a first metal oxide film containing an element belonging to Group 13 and a first insulating film containing oxygen are stacked in this order from the first gate electrode side, and wherein the second gate insulating film has a structure in which a second insulating film containing oxygen and a second metal oxide film containing an element belonging to Group 13 are stacked in this order from the oxide semiconductor film side. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device comprising:
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a first gate electrode; a first gate insulating film over the first gate electrode; an oxide semiconductor film in contact with the first gate insulating film and overlapping with the first gate electrode; a source electrode and a drain electrode over and in contact with the oxide semiconductor film; a second gate insulating film over the source electrode and the drain electrode and being in contact with the oxide semiconductor film; and a second gate electrode in contact with the second gate insulating film and overlapping with the oxide semiconductor film, wherein the first gate insulating film has a structure in which a first metal oxide film containing an element belonging to Group 13 and a first insulating film containing oxygen are stacked in this order from the first gate electrode side, and wherein the second gate insulating film has a structure in which a second insulating film containing oxygen and a second metal oxide film containing an element belonging to Group 13 are stacked in this order from the oxide semiconductor film side. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a first gate electrode; a first gate insulating film over the first gate electrode; a source electrode and a drain electrode over and in contact with the first gate insulating film; an oxide semiconductor film over and in contact with the first gate insulating film, the source electrode and the drain electrode, and overlapping with the first gate electrode; a second gate insulating film over the source electrode and the drain electrode and being in contact with the oxide semiconductor film; and a second gate electrode in contact with the second gate insulating film and overlapping with the oxide semiconductor film, wherein the first gate insulating film has a structure in which a first metal oxide film containing an element belonging to Group 13 and a first insulating film containing oxygen are stacked in this order from the first gate electrode side, and wherein the second gate insulating film has a structure in which a second insulating film containing oxygen and a second metal oxide film containing an element belonging to Group 13 are stacked in this order from the oxide semiconductor film side. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYAMAZAKI, Shunpei
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/411
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CPC Class CodesH01L 29/42384 for thin film field effect ...H01L 29/4908 for thin film semiconductor...H01L 29/78648 arranged on opposing sides ...H01L 29/7869 having a semiconductor body...
