SEMICONDUCTOR DEVICE INCLUDING CELL REGION AND PERIPHERAL REGION HAVING HIGH BREAKDOWN VOLTAGE STRUCTURE
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate including a substrate, a drift layer of a first conductivity type disposed on a surface of the substrate, and a base layer of a second conductivity type disposed on a surface of the drift layer; and
an electric field terminal part, whereinthe semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region,the base region has a bottom face located on a same plane throughout the cell region and the peripheral region,a portion of the base region located in the peripheral region provides an electric field relaxing layer,the electric field terminal part is disposed in the peripheral region,the electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer, andthe electric field terminal part penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.
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Accused Products
Abstract
A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.
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Citations
8 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate including a substrate, a drift layer of a first conductivity type disposed on a surface of the substrate, and a base layer of a second conductivity type disposed on a surface of the drift layer; and an electric field terminal part, wherein the semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region, the base region has a bottom face located on a same plane throughout the cell region and the peripheral region, a portion of the base region located in the peripheral region provides an electric field relaxing layer, the electric field terminal part is disposed in the peripheral region, the electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer, and the electric field terminal part penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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Specification