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Plasma Treatment for Semiconductor Devices

  • US 20110309490A1
  • Filed: 06/18/2010
  • Published: 12/22/2011
  • Est. Priority Date: 06/18/2010
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a substrate having a contact pad formed thereon;

    a polymer layer over the substrate, the polymer layer having a surface roughness between about 1% and about 8% as measured by Atomic Force Microscopy (AFM) with the index of surface area difference percentage (SADP), the polymer layer having an opening that exposes at least a portion of the contact pad; and

    an under bump metallization (UBM) structure extending through the opening and being in electrical contact with the contact pad.

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