LITHOGRAPHY APPARATUS AND DEVICE MANUFACTURING METHOD
First Claim
1. A lithography apparatus including a stage which includes a reference mark and configured to hold a substrate, a projection system configured to project a plurality of charged-particle beams onto the substrate, a first measurement device configured to irradiate a mark on the substrate with a light and to detect a light reflected by the mark to measure a position of the mark, a second measurement device configured to irradiate the reference mark with a charged-particle beam via the projection system and to detect a charged-particle beam that reaches the second measurement device from the reference mark to measure a position of the reference mark, and a detector configured to detect a position of the stage in a first direction parallel to an axis of the projection system and a second direction perpendicular to the axis, the apparatus drawing a pattern on the substrate with the plurality of charged-particle beams, the apparatus comprising:
- a controller configured to determine, among the plurality of charged-particle beams, a charged-particle beam of which an incident angle, relative to the first direction, on the reference mark falls within a tolerance, and to obtain a baseline of the first measurement device based on a position of the reference mark measured by the second measurement device using the determined charged-particle beam and a position of the reference mark measured by the first measurement device.
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Accused Products
Abstract
A lithography apparatus includes a first measurement device which measures a position of a mark on a substrate with light, a second measurement device which measures a position of a reference mark on a stage with a charged-particle, a detector which detects the position of the stage in a first direction parallel to the axis of a projection system and a second direction perpendicular to this axis, and a controller. The controller determines a charged-particle beam, in which the angle, with respect to the first direction, at which it is incident on the reference mark falls within a tolerance, and obtains a baseline for the first measurement device from the position of the reference mark measured by the second measurement device using the determined charged-particle beam and the position of the reference mark measured by the first measurement device.
25 Citations
5 Claims
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1. A lithography apparatus including a stage which includes a reference mark and configured to hold a substrate, a projection system configured to project a plurality of charged-particle beams onto the substrate, a first measurement device configured to irradiate a mark on the substrate with a light and to detect a light reflected by the mark to measure a position of the mark, a second measurement device configured to irradiate the reference mark with a charged-particle beam via the projection system and to detect a charged-particle beam that reaches the second measurement device from the reference mark to measure a position of the reference mark, and a detector configured to detect a position of the stage in a first direction parallel to an axis of the projection system and a second direction perpendicular to the axis, the apparatus drawing a pattern on the substrate with the plurality of charged-particle beams, the apparatus comprising:
a controller configured to determine, among the plurality of charged-particle beams, a charged-particle beam of which an incident angle, relative to the first direction, on the reference mark falls within a tolerance, and to obtain a baseline of the first measurement device based on a position of the reference mark measured by the second measurement device using the determined charged-particle beam and a position of the reference mark measured by the first measurement device. - View Dependent Claims (2, 3, 4, 5)
Specification