Power Semiconductor Device and Power Conversion Device

• US 20110310585A1
• Filed: 06/20/2011
• Published: 12/22/2011
• Est. Priority Date: 06/21/2010
• Status: Active Grant

• Current Assignee: Hitachi Astemo Ltd. (Hitachi, Ltd.)
• Original Assignee: Hitachi Automotive Systems Limited (Hitachi, Ltd.)
• Inventors: Fujino, Shinichi, SUWA, Tokihito, Kaneko, Yujiro, Takagi, Yusuke, Shimura, Takahiro
• Granted Patent: US 9,179,581 B2
• Time in Patent Office: Days
• US Class Current: 361/820
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/291 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/37099 Material
• CPC Class Codes: H01L 2224/37599 Material
• CPC Class Codes: H01L 2224/40137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73215 Layer and wire connectors
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/8384 Sintering
• CPC Class Codes: H01L 2224/84 using a strap connector
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/473 : by flowing liquids H01L23/4332, H01L23/4338 take precedence
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/34 : Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/36 : Structure, shape, material or disposition of the strap connectors prior to the connecting process
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/112 : Mixed assemblies
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/1203 : Rectifying Diode
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H02M 7/537 : using semiconductor devices only, e.g. single switched pulse inverters
• CPC Class Codes: H05K 5/0247 : Electrical details of casings, e.g. terminals, passages for cables or wiring
• CPC Class Codes: H05K 7/1432 : specially adapted for power drive units or power converters
• CPC Class Codes: H05K 7/14322 : wherein the control and power circuits of a power converter are arranged within the same casing
• CPC Class Codes: H05K 7/20845 : for automotive electronic casings H05K7/2089 takes precedence
• CPC Class Codes: H05K 7/2089 : for power electronics, e.g. for inverters for controlling motor
• CPC Class Codes: H05K 7/20927 : Liquid coolant without phase change

Abstract

A power semiconductor device includes a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit, a first sealing member sealing the plurality of power semiconductor elements, a positive electrode-side terminal and a negative electrode-side terminal each connected with any of the plurality of power semiconductor elements and protruding from the first sealing member, a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal, and a case in which the power semiconductor elements sealed with the first sealing member are housed.

Claims

1. A power semiconductor device, comprising:

a plurality of power semiconductor elements constituting upper and lower arms of an inverter circuit;

a first sealing member having a polyhedron shape and sealing the plurality of power semiconductor elements;

a positive electrode-side terminal connected with any of the plurality of power semiconductor elements and protruding from the first sealing member;

a negative electrode-side terminal connected with any of the plurality of power semiconductor elements and protruding from first sealing member;

a second sealing member sealing at least a part of the positive electrode-side terminal and at least a part of the negative electrode-side terminal; and

a case in which the power semiconductor elements sealed with the first sealing member are housed, wherein;

the positive electrode-side terminal and the negative electrode-side terminal are aligned along one surface of the first sealing member at their portions protruding from the first sealing member; and

the positive electrode-side terminal and the negative electrode-side terminal protrude in a layered state from the second sealing member and extend out of the case.

2. A power semiconductor device, comprising:

a series circuit of a first power semiconductor element for upper arm of an inverter and a second power semiconductor element for lower arm of the inverter;

a first sealing member sealing the series circuit;

an internal terminal protruding from the first sealing member, for supplying DC power to the series circuit;

an external terminal with a layer structure connected to the internal terminal;

a second sealing member sealing a connection section between the internal terminal and the external terminal; and

a case in which the series circuit sealed with the first sealing member and the internal terminal are housed, wherein;

the external terminal is configured to extend out of the case; and

magnetic fluxes are generated in directions canceling each other out by current flowing through each layer of the external terminal.

3. A power semiconductor device according to claim 2, wherein:

the case is formed of an electrically conductive member; and

an eddy current is induced in the case by current flowing through the series circuit connected to the internal terminal.

4. A power semiconductor device according to claim 2, wherein:

the case is provided with a heat dissipation surface including fins for heat dissipation outside thereof; and

the power semiconductor elements, constituting the series circuit sealed with the first sealing member, are arranged opposite to the heat dissipation surface inside the case.

5. A power semiconductor device according to claim 2, further comprising:

a control terminal that transmits a drive signal of the first and second power semiconductor elements; and

a bus bar for control terminal connected by metallic bonding to the control terminal, wherein;

the second sealing member further seals a connection section between the control terminal and the bus bar for control terminal.

6. A power semiconductor device according to claim 5, wherein:

the control terminal and the internal terminal each protrude in a same direction from the first sealing member;

the control terminal and the internal terminal are each bent in a same direction at each of their ends; and

a bent end of the control terminal and that of the internal terminal are metallically bonded with the bus bar for control terminal and the external terminal, respectively.

7. A power semiconductor device according to claim 5, wherein:

the control terminal and the internal terminal are aligned at their portions protruding from the first sealing member.

8. A power semiconductor device according to claim 2, further comprising:

an output terminal protruding from the first sealing member, for outputting AC power having been converted from the DC power by the series circuit; and

an output bus bar connected by metallic bonding to the output terminal, wherein;

the second sealing member further seals a connection section between the output terminal and the output bus bar.

9. A power semiconductor device according to claim 2, wherein:

the case has one opening face;

the connection section between the internal terminal and the external terminal is arranged inward of the case from the opening face; and

the external terminal extends out of the case from the opening face.

10. A power semiconductor device according to claim 2, further comprising:

a supporting member supporting the external terminal, wherein;

the supporting member is fixed to the case.

11. A power semiconductor device according to claim 2, wherein:

the second sealing member is filled in a space between inside of the case and the first sealing member.

12. A power conversion device, comprising:

a smoothing capacitor;

a bridge circuit connected to the smoothing capacitor and constituted with a plurality of power semiconductor devices for converting from DC power to AC power or from AC power to DC power; and

a cooling flow path former through which a cooling medium to cool the power semiconductor devices flows, wherein;

the power semiconductor device includes;

a power semiconductor element;

a first sealing member sealing the power semiconductor element;

an internal terminal protruding from the first sealing member;

am external terminal connected to the internal terminal;

a second sealing member sealing a connection section between the internal terminal and the external terminal; and

a case in which the power semiconductor element sealed with the first sealing member and the internal terminal are housed, and

the external terminal extends out.

13. A power conversion device according to claim 12, wherein:

the case is provided with a heat dissipation surface including fins for heat dissipation outside thereof;

the power semiconductor element sealed with the first sealing member is arranged opposite to the heat dissipation surface inside the case; and

the external terminal extends out.