METHOD AND APPARATUS FOR PRECURSOR DELIVERY
First Claim
1. A gas deposition system comprising:
- a first precursor container partially filled with a non-vaporized precursor and including a vapor space;
an inlet conduit extending between an inert gas supply and the vapor space;
an outlet conduit extending between the vapor space and a reaction chamber;
a first pulse valve disposed along the outlet conduit between the vapor space and a reaction chamber;
a second pulse valve disposed along the inlet conduit between the inert gas supply and the vapor space;
a gas flow restrictor disposed along the inlet conduit between the inert gas supply and the second pulse valve.
6 Assignments
0 Petitions
Accused Products
Abstract
An improved precursor vaporization device and method for vaporizing liquid and solid precursors having a low vapor pressure at a desired precursor temperature includes elements and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber. An improved ALD system and method for growing thin films having more thickness and thickness uniformity at lower precursor temperatures includes devices and operating methods for injecting an inert gas boost pulse into a precursor container prior to releasing a precursor pulse to a reaction chamber and for releasing a plurality of first precursor pulses into a reaction chamber to react with substrates before releasing a different second precursor pulse into the reaction chamber to react with the substrates.
75 Citations
28 Claims
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1. A gas deposition system comprising:
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a first precursor container partially filled with a non-vaporized precursor and including a vapor space; an inlet conduit extending between an inert gas supply and the vapor space; an outlet conduit extending between the vapor space and a reaction chamber; a first pulse valve disposed along the outlet conduit between the vapor space and a reaction chamber; a second pulse valve disposed along the inlet conduit between the inert gas supply and the vapor space; a gas flow restrictor disposed along the inlet conduit between the inert gas supply and the second pulse valve. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A gas deposition method comprising:
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partially filling a first precursor container with a non-vaporized precursor and providing a vapor space in the first precursor container; closing a first pulse valve disposed along an outlet conduit between the vapor space and a reaction chamber; injecting an inert gas pulse into the vapor space with the first pulse valve closed; closing a second pulse valve disposed along the inlet conduit between the inert gas supply and the vapor space; releasing a precursor pulse from the vapor space to the reaction chamber with the second pulse valve closed. - View Dependent Claims (21, 22, 23)
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24. A gas deposition method comprising:
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partially filling a first precursor container with a non-vaporized precursor and providing a vapor space in the first precursor container; closing a first pulse valve disposed along an outlet conduit between the vapor space and a reaction chamber; closing a second pulse valve disposed along the inlet conduit between the inert gas supply and the vapor space; closing a third pulse valve disposed along the inlet conduit between the inert gas supply and the second pulse valve; pulsing the third pulse valve to fill an inert gas storage volume disposed between the second pulse valve and a third pulse valve with a volume of inert gas; pulsing the second pulse valve to transfer the volume of inert gas stored in the inert gas storage volume into the vapor space; pulsing the first pulse valve to release a precursor pulse from the vapor space to the reaction chamber. - View Dependent Claims (25, 26, 27, 28)
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Specification